PF5010

更新时间： 2024-11-14 22:26:39

品牌	Logo	应用领域
WTE		二极管
页数	文件大小	规格书
2页	26K
描述
50A 1/2 PRESS-FIT DIODE

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PF5010 数据手册

WTE

PO WER SEM ICONDUCTORS

PF5000 – PF5010

50A 1/2" PRESS-FIT DIODE

Features

Diffused Junction

Low Leakage

Low Cost

High Surge Current Capability

Typical IR less than 10µA

DO-21

Dim

Min

15.63

12.75

8.89

Max

16.14

12.83

10.04

1.30

3.30

6.1

Mechanical Data

Case: All Copper Case and Components

Hermetically Sealed

1.25

3.05

Terminals: Contact Areas Readily Solderable

Polarity: Cathode to Case(Reverse Units Are

Available Upon Request and Are Designated

By An “R” Suffix, i.e. PF5002R or PF5010R)

Polarity: Red Color Equals Standard,

Black Color Equals Reverse Polarity

Mounting Position: Any

5.59

28.82

—

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol PF5000 PF5001 PF5002 PF5004 PF5006 PF5008 PF5010

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

Average Rectified Output Current @T_A= 150°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

500

Forward Voltage

@I_F= 100A

V^FM

I^RM

C^j

1.08

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

500

µA

Typical Junction Capacitance (Note 1)

300

1.2

Typical Thermal Resistance Junction to Case

(Note 2)

R^ꢀ^JC

K/W

°C

Operating and Storage Temperature Range

T^J, T^STG

-65 to +175

*Glass passivated forms are available upon request

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal Resistance: Junction to case, single side cooled.

PF5000 – PF5010

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