WTE
PO WER SEM ICONDUCTORS
PF5000 – PF5010
50A 1/2" PRESS-FIT DIODE
Features
!
Diffused Junction
!
!
!
!
Low Leakage
Low Cost
High Surge Current Capability
Typical IR less than 10µA
A
DO-21
Dim
A
Min
15.63
12.75
8.89
Max
16.14
12.83
10.04
1.30
3.30
6.1
Mechanical Data
B
C
!
Case: All Copper Case and Components
Hermetically Sealed
D
1.25
D
C
E
3.05
!
!
Terminals: Contact Areas Readily Solderable
Polarity: Cathode to Case(Reverse Units Are
Available Upon Request and Are Designated
By An “R” Suffix, i.e. PF5002R or PF5010R)
Polarity: Red Color Equals Standard,
Black Color Equals Reverse Polarity
Mounting Position: Any
F
5.59
G
28.82
—
G
All Dimensions in mm
!
!
E
F
B
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol PF5000 PF5001 PF5002 PF5004 PF5006 PF5008 PF5010
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
RMS Reverse Voltage
VR(RMS)
IO
280
50
V
A
Average Rectified Output Current @TA = 150°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
500
A
Forward Voltage
@IF = 100A
VFM
IRM
Cj
1.08
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
10
500
µA
pF
Typical Junction Capacitance (Note 1)
300
1.2
Typical Thermal Resistance Junction to Case
(Note 2)
RꢀJC
K/W
°C
Operating and Storage Temperature Range
TJ, TSTG
-65 to +175
*Glass passivated forms are available upon request
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance: Junction to case, single side cooled.
PF5000 – PF5010
1 of 2
© 2002 Won-Top Electronics