Datasheet > PE674DT

PE674DT

更新时间： 2024-09-20 17:15:27

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
7页	424K
描述
PDFN 3x3

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中文翻译

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数据手册

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PE674DT 数据手册

Dual N-Channel Enhancement Mode

Field Effect Transistor

PE674DT

NIKO-SEM

PDFN 3x3S

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

R_DS(ON)

7mΩ

I_D

1 : G1

30V

39A

31A

2,3,4 : D1

5,6,7 : S2

8 : G2

10.5mΩ

9 : S1/D2

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

UNITS

Gate-Source Voltage

V_GS

±20

T_C= 25 °C

Continuous Drain Current³

Pulsed Drain Current¹

Continuous Drain Current³

I_D

I_DM

I_D

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

9.5

7.6

17.5

15.3

Avalanche Current

Avalanche Energy

I_AS

L = 0.1mH

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

E_AS

26.4

Power Dissipation

P_D

8.3

2.2

1.4

7.6

1.7

1.1

P_D

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

R_JA

R_JC

Junction-to-Ambient²

°C / W

Junction-to-Case

6.5

¹Pulse width limited by maximum junction temperature T_J(MAX)=150°C.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C. The value in any given application depends on the user's specific board design.

³Package limitation current is Q2=19A , Q1=11A.

L-47-5

REV 1.1

12 3 4 5 6 7

中文翻译

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