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PE5B5DX PDF预览

PE5B5DX

更新时间: 2024-11-21 17:15:27
品牌 Logo 应用领域
尼克森微 - NIKOSEM 光电二极管
页数 文件大小 规格书
5页 405K
描述
PDFN 3x3

PE5B5DX 数据手册

 浏览型号PE5B5DX的Datasheet PDF文件第2页浏览型号PE5B5DX的Datasheet PDF文件第3页浏览型号PE5B5DX的Datasheet PDF文件第4页浏览型号PE5B5DX的Datasheet PDF文件第5页 
Dual P-Channel Enhancement  
Mode Field Effect Transistor  
PE5B5DX  
NIKO-SEM  
PDFN 3x3P  
Halogen-Free & Lead-Free  
PRODUCT SUMMARY  
V(BR)DSS  
-20V  
RDS(ON)  
ID  
20mΩ  
-30A  
Features  
• Pb−Free, Halogen Free and RoHS compliant.  
• Low RDS(on) to Minimize Conduction Losses.  
• Ohmic Region Good RDS(on) Ratio.  
• Optimized Gate Charge to Minimize Switching Losses.  
Applications  
Protection Circuits Applications.  
Logic/Load Switch Circuits Applications.  
G : GATE  
D : DRAIN  
S : SOURCE  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
Drain-Source Voltage  
SYMBOL  
VDS  
LIMITS  
-20  
UNITS  
V
V
Gate-Source Voltage  
VGS  
±12  
-30  
TC = 25 °C  
TC = 100 °C  
TA = 25 °C  
TA = 70 °C  
-19  
Continuous Drain Current4  
ID  
-8.8  
-7  
A
Pulsed Drain Current1  
Avalanche Current  
Avalanche Energy  
IDM  
IAS  
-40  
-21.5  
23  
L = 0.1mH  
TC = 25 °C  
TC = 100 °C  
TA = 25 °C  
TA = 70 °C  
EAS  
mJ  
W
29  
11  
Power Dissipation3  
PD  
2.5  
1.6  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
TYPICAL  
MAXIMUM  
UNITS  
Junction-to-Ambient2  
50  
72  
t 10s  
RJA  
RJA  
RJC  
Junction-to-Ambient2  
Steady-State  
°CW  
Junction-to-Case  
4.3  
Steady-State  
1Pulse width limited by maximum junction temperature.  
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe.  
3The Power dissipation is based on RJA t 10s value.  
4Package limitation current is -9A.  
H-40-4  
REV1.0  
1

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