Datasheet > PE5Q8JZ

PE5Q8JZ

更新时间： 2024-11-07 17:15:43

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
5页	486K
描述
PDFN 3x3

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中文翻译

获取价格

数据手册

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PE5Q8JZ 数据手册

Dual N-Channel Enhancement Mode

Field Effect Transistor

PE5Q8JZ

NIKO-SEM

PDFN 3x3S

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

12V

R_DS(ON)

I_D

55A

4.5mΩ

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

• Products Integrated ESD diode

Applications

• Protection Circuits Applications.

• Protable Devices for Battery PACK Applications.

G : GATE

D : DRAIN

S : SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

UNITS

±12

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current²

I_D

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

L = 0.1mH

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

E_AS

Power Dissipation

P_D

2.5

1.6

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Ambient³

Junction-to-case

SYMBOL

TYPICAL

MAXIMUM

UNITS

°C／W

R_JA

R_JC

4.5

¹Pulse width limited by maximum junction temperature.

²Package limitation current is 20A.

³The value of R_JAis measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

I-45-1

REV1.0

12 3 4 5

中文翻译

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