Datasheet > PE5G6EA

PE5G6EA

更新时间： 2024-12-01 17:15:43

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
4页	260K
描述
PDFN 3x3

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中文翻译

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数据手册

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PE5G6EA 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

PE5G6EA

NIKO-SEM

PDFN 3x3P

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

24V

R_DS(ON)

I_D

72A

2.4mΩ

G : GATE

D : DRAIN

S : SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

UNITS

±12

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current³

I_D

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

120

L = 0.1mH

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

E_AS

105

Power Dissipation

P_D

1.9

1.2

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JA

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient²

°C / W

Junction-to-Case

5.5

R_JC

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

³Package limitation current is 26A

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

PARAMETER

SYMBOL

TEST CONDITIONS

UNIT

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage

Gate Threshold Voltage

V_(BR)DSS

V_GS(th)

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

0.7

0.8

1.3

J-10-4

REV 1.2

12 3 4

中文翻译

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