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PE5G5EA PDF预览

PE5G5EA

更新时间: 2024-11-21 17:15:19
品牌 Logo 应用领域
尼克森微 - NIKOSEM 光电二极管
页数 文件大小 规格书
6页 402K
描述
PDFN 3x3

PE5G5EA 数据手册

 浏览型号PE5G5EA的Datasheet PDF文件第2页浏览型号PE5G5EA的Datasheet PDF文件第3页浏览型号PE5G5EA的Datasheet PDF文件第4页浏览型号PE5G5EA的Datasheet PDF文件第5页浏览型号PE5G5EA的Datasheet PDF文件第6页 
P-Channel Logic Level Enhancement Mode  
Field Effect Transistor  
PE5G5EA  
NIKO-SEM  
PDFN 3x3P  
Halogen-free & Lead-Free  
PRODUCT SUMMARY  
V(BR)DSS  
-30V  
RDS(ON)  
ID  
16mΩ  
-30A  
Features  
• Pb−Free, Halogen Free and RoHS compliant.  
• Low RDS(on) to Minimize Conduction Losses.  
• Ohmic Region Good RDS(on) Ratio.  
• Optimized Gate Charge to Minimize Switching Losses.  
Products Integrated ESD diode with ESD Protected.  
G. GATE  
D. DRAIN  
S. SOURCE  
D
S
D
S
D
S
D
G
Applications  
Protection Circuits Applications.  
Logic/Load Switch Circuits Applications.  
100% UIS Tested  
100% Rg Tested  
#1  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
Drain-Source Voltage  
SYMBOL  
VDS  
LIMITS  
-30  
±25  
-30  
-19  
-9.3  
-7.4  
-72  
-27  
36  
UNITS  
V
V
Gate-Source Voltage  
VGS  
TC = 25 °C  
TC = 100 °C  
TA = 25 °C  
TA = 70 °C  
ID  
Continuous Drain Current  
A
Pulsed Drain Current1  
Avalanche Current  
Avalanche Energy  
IDM  
IAS  
L = 0.1mH  
TC = 25 °C  
TC = 100 °C  
TA = 25 °C  
TA = 70 °C  
EAS  
mJ  
W
25  
10  
Power Dissipation3  
PD  
2.4  
1.5  
Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 150  
°C  
REV 1.1  
M-32-1  
1

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