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PDTC144EMB PDF预览

PDTC144EMB

更新时间: 2024-11-06 21:15:19
品牌 Logo 应用领域
恩智浦 - NXP 开关晶体管
页数 文件大小 规格书
11页 709K
描述
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, 1 X 0.60 MM, 0.37 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, DFN1006B-3, 3 PIN

PDTC144EMB 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:1 X 0.60 MM, 0.37 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, DFN1006B-3, 3 PINReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.61
其他特性:BUILT IN BIAS RESISTANCE RATIO IS 1外壳连接:COLLECTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PBCC-N3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):260极性/信道类型:NPN
参考标准:AEC-Q101; IEC-60134表面贴装:YES
端子面层:TIN端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):230 MHzBase Number Matches:1

PDTC144EMB 数据手册

 浏览型号PDTC144EMB的Datasheet PDF文件第2页浏览型号PDTC144EMB的Datasheet PDF文件第3页浏览型号PDTC144EMB的Datasheet PDF文件第4页浏览型号PDTC144EMB的Datasheet PDF文件第5页浏览型号PDTC144EMB的Datasheet PDF文件第6页浏览型号PDTC144EMB的Datasheet PDF文件第7页 
PDTC144EMB  
SOT883B  
NPN resistor-equipped transistor; R1 = 47 k, R2 = 47 kΩ  
Rev. 1 — 11 June 2012  
Product data sheet  
1. Product profile  
1.1 General description  
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B  
Surface-Mounted Device (SMD) plastic package.  
PNP complement: PDTA144EMB.  
1.2 Features and benefits  
100 mA output current capability  
Reduces component count  
Built-in bias resistors  
Simplifies circuit design  
AEC-Q101 qualified  
Leadless ultra small SMD plastic  
package  
Reduces pick and place costs  
Low package height of 0.37 mm  
1.3 Applications  
Low-current peripheral driver  
Control of IC inputs  
Replaces general-purpose transistors  
in digital applications  
Mobile applications  
1.4 Quick reference data  
Table 1.  
Symbol  
VCEO  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
collector-emitter  
voltage  
open base  
-
-
50  
V
IO  
output current  
-
-
100  
61  
mA  
R1  
bias resistor 1 (input)  
bias resistor ratio  
Tamb = 25 °C  
33  
0.8  
47  
1
k  
R2/R1  
1.2  
 
 
 
 
 

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