Datasheet > PDTC114EQB

PDTC114EQB

更新时间： 2023-09-03 20:29:56

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
18页	321K
描述
50 V, 100 mA NPN resistor-equipped transistorsProduction

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PDTC114EQB 数据手册

Nexperia

PDTC143/114/124/144EQB series

50 V, 100 mA NPN resistor-equipped transistors

006aac831

(1)

aaa-018583

(2)

0.1

0.80 mA

(3)

0.72 mA

(A)

0.64 mA

0.56 mA

0.08

0.48 mA

0.40 mA

0.06

0.04

0.02

0.32 mA

0.24 mA

-1

(mA)

= 0.16 mA

4 5

V_CE= 5 V

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= -40 °C

(V)

T_amb= 25 °C

Fig. 4. PDTC143EQB: DC current gain as a function of Fig. 5. PDTC143EQB: Collector current as a function of

collector current; typical values

collector-emitter voltage; typical values

006aac832

006aac833

CEsat

(V)

I(on)

(V)

(1)

(2)

(3)

(1)

-1

(2)

(3)

-2

-1

(mA)

-1

(mA)

I_C/I_B= 20

V_CE= 0.3 V

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= -40 °C

(1) T_amb= -40 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

Fig. 6. PDTC143EQB: Collector-emitter saturation

voltage as a function of collector current;

typical values

Fig. 7. PDTC143EQB: On-state input voltage as a

function of collector current; typical values

PDTC143_114_124_144EQB_SER

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Product data sheet

Rev. 1 — 1 October 2021

6 / 18

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