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PDTC114EU PDF预览

PDTC114EU

更新时间: 2024-02-09 19:37:56
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
10页 216K
描述
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩProduction

PDTC114EU 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.74最大集电极电流 (IC):0.1 A
最小直流电流增益 (hFE):30JESD-609代码:e3
元件数量:1极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Matte Tin (Sn)
Base Number Matches:1

PDTC114EU 数据手册

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PDTC114EU  
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ  
2 June 2023  
Product data sheet  
1. General description  
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted  
Device (SMD) plastic package.  
2. Features and benefits  
100 mA output current capability  
Built-in bias resistors  
Simplifies circuit design  
Reduces component count  
Reduces pick and place costs  
AEC-Q101 qualified  
3. Applications  
Digital application in automotive and industrial segments  
Control of IC inputs  
Cost-saving alternative for BC847/857 series in digital applications  
Switching loads  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
50  
V
IO  
output current  
-
-
100  
13  
mA  
kΩ  
R1  
bias resistor 1 (input)  
bias resistor ratio  
7
10  
1
R2/R1  
0.8  
1.2  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
Description  
Simplified outline  
Graphic symbol  
3
I
input (base)  
O
2
GND  
O
ground (emitter)  
output (collector)  
R1  
I
3
R2  
GND  
1
2
sym007  
SC-70 (SOT323)  
 
 
 
 
 

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