Datasheet > PDTC114EU

PDTC114EU

更新时间： 2024-11-26 11:13:07

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	216K
描述
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩProduction

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PDTC114EU 数据手册

PDTC114EU

NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

2 June 2023

Product data sheet

1. General description

NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted

Device (SMD) plastic package.

2. Features and benefits

•

100 mA output current capability

•

Built-in bias resistors

Simplifies circuit design

Reduces component count

Reduces pick and place costs

AEC-Q101 qualified

3. Applications

•

Digital application in automotive and industrial segments

Control of IC inputs

Cost-saving alternative for BC847/857 series in digital applications

Switching loads

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_O

output current

100

kΩ

bias resistor 1 (input)

bias resistor ratio

R2/R1

0.8

1.2

5. Pinning information

Table 2. Pinning information

Symbol

Description

Simplified outline

Graphic symbol

input (base)

GND

ground (emitter)

output (collector)

GND

sym007

SC-70 (SOT323)

12 3 4 5 6 7...10

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