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PDTC114EU/T4 PDF预览

PDTC114EU/T4

更新时间: 2024-01-12 21:24:07
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
17页 711K
描述
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP General Purpose Small Signal

PDTC114EU/T4 技术参数

生命周期:Transferred零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.08
其他特性:BUILT IN BIAS RESISTANCE RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PDTC114EU/T4 数据手册

 浏览型号PDTC114EU/T4的Datasheet PDF文件第2页浏览型号PDTC114EU/T4的Datasheet PDF文件第3页浏览型号PDTC114EU/T4的Datasheet PDF文件第4页浏览型号PDTC114EU/T4的Datasheet PDF文件第5页浏览型号PDTC114EU/T4的Datasheet PDF文件第6页浏览型号PDTC114EU/T4的Datasheet PDF文件第7页 
PDTC114E series  
NPN resistor-equipped transistors;  
R1 = 10 k, R2 = 10 k  
Rev. 12 — 21 December 2011  
Product data sheet  
1. Product profile  
1.1 General description  
NPN Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD)  
plastic packages.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
PNP  
complement  
Package  
configuration  
JEITA  
SC-75  
SC-101  
-
JEDEC  
PDTC114EE  
PDTC114EM  
PDTC114ET  
PDTC114EU  
SOT416  
SOT883  
SOT23  
SOT323  
-
-
PDTA114EE  
PDTA114EM  
ultra small  
leadless ultra small  
small  
TO-236AB PDTA114ET  
PDTA114EU  
SC-70  
-
very small  
1.2 Features and benefits  
100 mA output current capability  
Built-in bias resistors  
Reduces component count  
Reduces pick and place costs  
AEC-Q101 qualified  
Simplifies circuit design  
1.3 Applications  
Digital application in automotive and  
industrial segments  
Cost-saving alternative for BC847/857  
series in digital applications  
Switching loads  
Control of IC inputs  
1.4 Quick reference data  
Table 2.  
Symbol  
VCEO  
IO  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
-
Max  
50  
Unit  
V
collector-emitter voltage  
output current  
open base  
-
-
-
100  
13  
mA  
k  
R1  
bias resistor 1 (input)  
bias resistor ratio  
7
10  
1.0  
R2/R1  
0.8  
1.2  

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