5秒后页面跳转
PBYL1020 PDF预览

PBYL1020

更新时间: 2024-09-15 22:09:27
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管
页数 文件大小 规格书
5页 46K
描述
Rectifier diodes Schottky barrier

PBYL1020 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AC包装说明:R-PSFM-T2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.84应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.64 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:20 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

PBYL1020 数据手册

 浏览型号PBYL1020的Datasheet PDF文件第2页浏览型号PBYL1020的Datasheet PDF文件第3页浏览型号PBYL1020的Datasheet PDF文件第4页浏览型号PBYL1020的Datasheet PDF文件第5页 
Philips Semiconductors  
Product specification  
Rectifier diodes  
Schottky barrier  
PBYL1025 series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
• Reverse surge capability  
• High thermal cycling performance  
• Low thermal resistance  
VR = 20 V/ 25 V  
IF(AV) = 10 A  
VF 0.4 V  
k
1
a
2
GENERAL DESCRIPTION  
PINNING  
SOD59 (TO220AC)  
Schottky rectifier diodes intended  
for use as output rectifiers in low  
voltage, high frequency switched  
mode power supplies.  
PIN  
DESCRIPTION  
cathode  
anode  
cathode  
tab  
1
2
The PBYL1025 series is supplied in  
the  
SOD59  
(TO220AC)  
tab  
conventional leaded package.  
1
2
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
PBYL10  
20  
25  
VRRM  
VRWM  
Peak repetitive reverse  
-
-
20  
25  
V
V
voltage  
Working peak reverse  
voltage  
Continuous reverse voltage  
20  
20  
25  
25  
VR  
T
mb 119 ˚C  
-
-
V
A
IF(AV)  
Average rectified forward  
current  
square wave; δ = 0.5; Tmb 132 ˚C  
square wave; δ = 0.5; Tmb 132 ˚C  
10  
20  
IFRM  
IFSM  
Repetitive peak forward  
current  
-
A
Non-repetitive peak forward t = 10 ms  
-
-
135  
150  
A
A
current  
t = 8.3 ms  
sinusoidal; Tj = 125 ˚C prior to  
surge; with reapplied VRRM(max)  
pulse width and repetition rate  
limited by Tj max  
IRRM  
Tj  
Peak repetitive reverse  
surge current  
-
-
1
A
Operating junction  
temperature  
150  
175  
˚C  
˚C  
Tstg  
Storage temperature  
- 65  
March 1998  
1
Rev 1.000  

与PBYL1020相关器件

型号 品牌 获取价格 描述 数据表
PBYL1020B NXP

获取价格

Rectifier diodes Schottky barrier
PBYL1020B/T3 NXP

获取价格

10A, 20V, SILICON, RECTIFIER DIODE
PBYL1025 NXP

获取价格

Rectifier diodes Schottky barrier
PBYL1025B NXP

获取价格

Rectifier diodes Schottky barrier
PBYL1025B/T3 NXP

获取价格

10A, 25V, SILICON, RECTIFIER DIODE
PBYL1520CT NXP

获取价格

Rectifier diodes Schottky barrier
PBYL1520CTB NXP

获取价格

Rectifier diodes Schottky barrier
PBYL1525CT NXP

获取价格

Rectifier diodes Schottky barrier
PBYL1525CTB NXP

获取价格

Rectifier diodes Schottky barrier
PBYL1620 NXP

获取价格

Rectifier diodes Schottky barrier