5秒后页面跳转
PBLS4005D/T1 PDF预览

PBLS4005D/T1

更新时间: 2024-02-06 09:30:29
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
15页 154K
描述
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-74, 6 PIN, BIP General Purpose Small Signal

PBLS4005D/T1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SC-74
包装说明:PLASTIC, SC-74, 6 PIN针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.4其他特性:BUILT IN BIAS RESISTOR RATIO 1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):150
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz

PBLS4005D/T1 数据手册

 浏览型号PBLS4005D/T1的Datasheet PDF文件第2页浏览型号PBLS4005D/T1的Datasheet PDF文件第3页浏览型号PBLS4005D/T1的Datasheet PDF文件第4页浏览型号PBLS4005D/T1的Datasheet PDF文件第5页浏览型号PBLS4005D/T1的Datasheet PDF文件第6页浏览型号PBLS4005D/T1的Datasheet PDF文件第7页 
PBLS4005D  
40 V PNP BISS loadswitch  
Rev. 02 — 19 July 2005  
Product data sheet  
1. Product profile  
1.1 General description  
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-  
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)  
plastic package.  
1.2 Features  
Low VCEsat (BISS) and resistor-equipped transistor in one package  
Low threshold voltage (< 1 V) compared to MOSFET  
Low drive power required  
Space-saving solution  
Reduction of component count  
1.3 Applications  
Supply line switches  
Battery charger switches  
High-side switches for LEDs, drivers and backlights  
Portable equipment  
1.4 Quick reference data  
Table 1:  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
TR1; PNP low VCEsat transistor  
VCEO  
IC  
collector-emitter voltage  
collector current (DC)  
open base  
-
-
-
-
40  
1  
V
[1]  
[2]  
-
A
RCEsat  
collector-emitter saturation IC = 500 mA;  
240  
340  
mΩ  
resistance  
IB = 50 mA  
TR2; NPN resistor-equipped transistor  
VCEO  
IO  
collector-emitter voltage  
output current  
open base  
-
-
50  
V
-
-
100  
61  
mA  
kΩ  
R1  
bias resistor 1 (input)  
bias resistor ratio  
33  
0.8  
47  
1
R2/R1  
1.2  
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.  
[2] Pulse test: tp 300 µs; δ ≤ 0.02.  

与PBLS4005D/T1相关器件

型号 品牌 描述 获取价格 数据表
PBLS4005D/T2 NXP TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-74, 6 PI

获取价格

PBLS4005DT/R NXP SPECIAL-PURPOSE TRANSISTOR,50V V(BR)CEO,1A I(C),SOT-457

获取价格

PBLS4005V NXP 40 V PNP BISS loadswitch

获取价格

PBLS4005Y NXP Low VCEsat (BISS) transistors

获取价格

PBLS4005Y NEXPERIA 40 V 500 mA PNP/NPN loadswitch double transistorProduction

获取价格

PBLS4005Y,115 NXP PBLS4005Y; PBLS4005V - 40 V PNP BISS loadswitch TSSOP 6-Pin

获取价格