Datasheet > PBLS6003D-Q

PBLS6003D-Q

更新时间： 2024-03-03 10:09:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
16页	305K
描述
60 V, 1 A PNP loadswitch double transistorProduction

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PBLS6003D-Q 数据手册

PBLS6003D-Q

60 V, 1 A PNP loadswitch double transistor

30 August 2023

Product data sheet

1. General description

PNP low V_CEsattransistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74)

small Surface Mounted Device (SMD) plastic package.

2. Features and benefits

•

Low V_CEsattransistor and resistor-equipped transistor in one package

•

Low threshold voltage (< 1 V) compared to MOSFET

Low drive power required

Space-saving solution

Reduction of component count

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Supply line switches

Battery charger switches

High-side switches for LEDs, drivers and backlights

Portable equipment

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TR1; PNP low V_CEsattransistor

V_CEO

collector-emitter

voltage

open base

-60

I_C

collector current

[1]

-1

R_CEsat

collector-emitter

saturation resistance

I_C= -1 A; I_B= -100 mA; T_amb= 25 °C;

pulsed; t_p≤ 300 µs; δ_factor≤ 0.02

255

340

mΩ

TR2; NPN resistor-equipped transistor

V_CEO

collector-emitter

voltage

open base

I_O

output current

100

kΩ

bias resistor 1 (input)

bias resistor ratio

R2/R1

0.8

1.2

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.

12 3 4 5 6 7...16

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