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PBLS2001D,115 PDF预览

PBLS2001D,115

更新时间: 2024-11-12 21:17:47
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
16页 148K
描述
PBLS2001D - 20 V PNP BISS loadswitch TSOP 6-Pin

PBLS2001D,115 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TSOP包装说明:PLASTIC, SC-74, 6 PIN
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.28
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN AND PNP
最大功率耗散 (Abs):0.6 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):185 MHzBase Number Matches:1

PBLS2001D,115 数据手册

 浏览型号PBLS2001D,115的Datasheet PDF文件第2页浏览型号PBLS2001D,115的Datasheet PDF文件第3页浏览型号PBLS2001D,115的Datasheet PDF文件第4页浏览型号PBLS2001D,115的Datasheet PDF文件第5页浏览型号PBLS2001D,115的Datasheet PDF文件第6页浏览型号PBLS2001D,115的Datasheet PDF文件第7页 
PBLS2001D  
20 V PNP BISS loadswitch  
Rev. 02 — 27 August 2009  
Product data sheet  
1. Product profile  
1.1 General description  
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor-  
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)  
plastic package.  
1.2 Features  
I Low VCEsat (BISS) and resistor-equipped transistor in one package  
I Low threshold voltage (< 1 V) compared to MOSFET  
I Low drive power required  
I Space-saving solution  
I Reduction of component count  
1.3 Applications  
I Supply line switches  
I Battery charger switches  
I High-side switches for LEDs, drivers and backlights  
I Portable equipment  
1.4 Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
TR1; PNP low VCEsat transistor  
VCEO  
IC  
collector-emitter voltage  
collector current (DC)  
open base  
-
-
-
-
20  
1  
V
-
A
[1]  
RCEsat  
collector-emitter saturation IC = 1 A;  
resistance IB = 100 mA  
185  
280  
mΩ  
TR2; NPN resistor-equipped transistor  
VCEO  
IO  
collector-emitter voltage  
output current  
open base  
-
-
50  
V
-
-
100  
2.86  
1.2  
mA  
kΩ  
R1  
bias resistor 1 (input)  
bias resistor ratio  
1.54  
0.8  
2.2  
1
R2/R1  
[1] Pulse test: tp 300 µs; δ ≤ 0.02  
 
 
 
 
 
 

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