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P880CH26D4DO PDF预览

P880CH26D4DO

更新时间: 2024-10-28 05:48:51
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 257K
描述
Silicon Controlled Rectifier, 3885 A, 2600 V, SCR

P880CH26D4DO 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:HIGH RELIABILITY
配置:SINGLE最大直流栅极触发电流:300 mA
JESD-30 代码:O-CEDB-N2元件数量:1
端子数量:2封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:3885 A
断态重复峰值电压:2600 V重复峰值反向电压:2600 V
表面贴装:YES端子形式:NO LEAD
端子位置:END触发设备类型:SCR
Base Number Matches:1

P880CH26D4DO 数据手册

 浏览型号P880CH26D4DO的Datasheet PDF文件第2页 

与P880CH26D4DO相关器件

型号 品牌 获取价格 描述 数据表
P880CH26E4DO IXYS

获取价格

Silicon Controlled Rectifier, 3885 A, 2600 V, SCR
P880CH26F5D IXYS

获取价格

Silicon Controlled Rectifier, 3885A I(T)RMS, 2600V V(DRM), 2600V V(RRM), 1 Element
P880CH26F5DO IXYS

获取价格

Silicon Controlled Rectifier, 3885A I(T)RMS, 2600V V(DRM), 2600V V(RRM), 1 Element
P880CH28C5D IXYS

获取价格

Silicon Controlled Rectifier, 3885A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element
P880CH28C5DO IXYS

获取价格

Silicon Controlled Rectifier, 3885A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element
P880CH28D4D IXYS

获取价格

Silicon Controlled Rectifier, 3885A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element
P880CH28D4DO IXYS

获取价格

Silicon Controlled Rectifier, 3885A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element
P880CH28E4D IXYS

获取价格

Silicon Controlled Rectifier, 3885A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element
P880CH28E4DO IXYS

获取价格

Silicon Controlled Rectifier, 3885A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element
P880CH28E5D IXYS

获取价格

Silicon Controlled Rectifier, 3885A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element