Datasheet > P8079_07

P8079_07

更新时间： 2024-11-18 03:43:39

品牌	Logo	应用领域
HAMAMATSU		光电
页数	文件大小	规格书
4页	83K
描述
InAs photovoltaic detector

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中文翻译

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P8079_07 数据手册

I N F R A R E D D E T E C T O R

InAs photovoltaic detector

P8079 series P7163

Infrared detectors with high sensitivity and high-speed response

InAs photovoltaic detectors have high sensitivity and high-speed response in the near infrared region from 1.5 to 3.8 µm.

These detectors offer better characteristics than PbSe photoconductive detectors.

Features

Applications

Thermoelectrically cooled type: high sensitivity

and high-speed response

Metal dewar type available for low light measurement

Long-wavelength cut-off of up to 3.8 µm

Easy-to-use detector/preamp modules available

Gas analysis

Infrared radiation measurement

Infrared spectrophotometry

FTIR

Accessories (Optional)

Heatsink for one-stage TE-cooled type A3179

Heatsink for two-stage TE-cooled type A3179-01

Temperature controller

C1103-04

Infrared detector module with preamp

P4631-01 (Integrated with P8079-21)

Amplifiers for InAs photovoltaic detector C4159-05

(only for P7163)

Specifications / Absolute maximum ratings

ꢀ

Absolute maximum ratings

Dim ensional

Active

area

Thermistor

power

dissipation

(mW)

Reverse

voltage

Operating

temperature temperature

Storage

outline/

W indow

m aterial *

Type No.

Package

Cooling

Topr

(°C)

Tstg

(°C)

(mm)

(V)

P8079-01

P8079-11

P8079-21

P7163

TO-5

TO-8

Non-cooled

O ne-stage T E -cooled

T wo-stage T E -cooled

LN2

ꢀ

0.2

0.5

-40 to +60

-55 to +60

φ1

ꢀ

Metal dewer

* Window material S: sapphire glass

Electrical and optical characteristics (Typ. unless otherwise noted)

ꢀ

Measurem ent

condition

Elem ent

tem perature

Photo

sensitivity

Rise time

Term inal

capacitance

VR=0 V

f=1 MHz

P eak

sensitivity

wavelength

Cut-off

wavelength

λc

Shunt

resistance

Rsh

NEP

λ=λp

VR=0 V

RL=50 Ω

0 to 63 %

(λp, 1200, 1)

λ=λp

Type No.

Min.

Typ.

(°C)

-10

-30

-196

(µm)

3.45

3.30

3.25

3.00

(µm)

3.8

3.6

3.5

3.1

(A/W)

1.1

(cm ·Hz^1/2/W ) (cm ·Hz^1/2/W )

(W/Hz^1/2)

(µs)

0.1

(pF)

150

(Ω)

P8079-01

P8079-11

P8079-21

P7163

1.5 × 10⁹2 × 10⁹

4.4 × 10^-11

7.5 × 10⁹1 × 10¹⁰8.9 × 10^-12

1.5 × 10¹⁰2 × 10¹⁰4.4 × 10^-12

1.3

200

0.1

1 × 10⁵3.5 × 10¹¹6 × 10¹¹1.5 × 10^-13

12 3 4

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与P8079_07相关器件

型号	品牌	获取价格	描述	数据表
P8079-01	HAMAMATSU	获取价格	InAs photovoltaic detector
P8079-11	HAMAMATSU	获取价格	InAs photovoltaic detector
P8079-12	HAMAMATSU	获取价格	Infrared Sensor,
P8079-21	HAMAMATSU	获取价格	InAs photovoltaic detector
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P8080A-1B	ETC	获取价格	8-Bit Microprocessor
P8080A-2	ETC	获取价格	8-Bit Microprocessor
P8080A-2B	ETC	获取价格	8-Bit Microprocessor
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