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P8079-12 PDF预览

P8079-12

更新时间: 2024-11-18 21:14:07
品牌 Logo 应用领域
HAMAMATSU /
页数 文件大小 规格书
4页 79K
描述
Infrared Sensor,

P8079-12 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.61Base Number Matches:1

P8079-12 数据手册

 浏览型号P8079-12的Datasheet PDF文件第2页浏览型号P8079-12的Datasheet PDF文件第3页浏览型号P8079-12的Datasheet PDF文件第4页 
I N F R A R E D D E T E C T O R  
InAs photovoltaic detector  
,
P8079 series P7163  
Infrared detectors with high sensitivity and high-speed response  
InAs photovoltaic detectors have high sensitivity and high-speed response in the near infrared region from 1.5 to 3.8 µm.  
These detectors offer better characteristics than PbSe photoconductive detectors.  
Features  
Applications  
Thermoelectrically cooled type: high sensitivity  
and high-speed response  
Metal dewar type available for low light measurement  
Long-wavelength cut-off of up to 3.8 µm  
Easy-to-use detector/preamp modules available  
Gas analysis  
Infrared radiation measurement  
Infrared spectrophotometry  
FTIR  
Accessories (Optional)  
Heatsink for one-stage TE-cooled type A3179  
Heatsink for two-stage TE-cooled type A3179-01  
Temperature controller  
C1103-04  
Infrared detector module with preamp  
P4631-01 (Integrated with P8079-21)  
Amplifiers for InAs photovoltaic detector C4159-05  
(only for P7163)  
Specifications / Absolute maximum ratings  
Absolute maximum ratings  
Dim ensional  
Active  
area  
Thermistor  
power  
dissipation  
(mW)  
Reverse  
voltage  
VR  
Operating  
temperature temperature  
Storage  
outline/  
W indow  
m aterial *  
Type No.  
Package  
Cooling  
Topr  
(°C)  
Tstg  
(°C)  
(mm)  
(V)  
P8079-01  
P8079-11  
P8079-21  
P7163  
/S  
TO-5  
TO-8  
Non-cooled  
O ne-stage T E -cooled  
T wo-stage T E -cooled  
LN2  
-
/S  
0.2  
-
0.5  
-40 to +60  
-55 to +60  
φ1  
/S  
Metal dewer  
* Window material S: sapphire glass  
Electrical and optical characteristics (Typ. unless otherwise noted)  
Measurem ent  
condition  
Elem ent  
tem perature  
T
Photo  
sensitivity  
S
Rise time  
Term inal  
capacitance  
Ct  
VR=0 V  
f=1 MHz  
P eak  
sensitivity  
wavelength  
Cut-off  
wavelength  
λc  
tr  
Shunt  
resistance  
Rsh  
NEP  
λ=λp  
D
VR=0 V  
RL=50 Ω  
0 to 63 %  
(λp, 1200, 1)  
λ=λp  
Type No.  
λ
p
Min.  
Typ.  
(°C)  
25  
-10  
-30  
-196  
(µm)  
3.45  
3.30  
3.25  
3.00  
(µm)  
3.8  
3.6  
3.5  
3.1  
(A/W)  
1.1  
(cm ·Hz1/2/W ) (cm ·Hz1/2/W )  
(W/Hz1/2)  
(µs)  
0.1  
(pF)  
80  
10  
5
150  
()  
10  
80  
P8079-01  
P8079-11  
P8079-21  
P7163  
1.5 × 109 2 × 109  
4.4 × 10-11  
7.5 × 109 1 × 1010 8.9 × 10-12  
1.5 × 1010 2 × 1010 4.4 × 10-12  
1.3  
200  
0.1  
1 × 105 3.5 × 1011 6 × 1011 1.5 × 10-13  
1

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