P8079-11

更新时间： 2024-11-17 22:26:55

品牌	Logo	应用领域
HAMAMATSU		光电光电器件
页数	文件大小	规格书
4页	155K
描述
InAs photovoltaic detector

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

P8079-11 技术参数

生命周期：	Obsolete	包装说明：	TO-8, 6 PIN
Reach Compliance Code：	unknown	HTS代码：	8541.40.80.00
风险等级：	5.84	配置：	SINGLE WITH BUILT-IN TE-COOLER AND THERMISTOR
功能数量：	1	最高工作温度：	60 °C
最低工作温度：	-40 °C	光电设备类型：	OPTOELECTRONIC DEVICE
Base Number Matches：	1

P8079-11 数据手册

I N F R A R E D D E T E C T O R

InAs photovoltaic detector

P8079 series P7163

High-speed, low noise photovoltaic IR detectors

InAs photovoltaic detectors cover a spectral response range equivalent to that of PbS detectors, but provide higher response speed and

lower noise.

Features

Applications

Thermoelectrically cooled type: high sensitivity

and high-speed response

Metal dewar type available for low light measurement

Long-wavelength cut-off of up to 3.8 µm

Easy-to-use detector/preamp modules available

Gas analysis

Infrared radiation measurement

Infrared spectrophotometry

FTIR

Accessories (Optional)

Heatsink for one-stage TE-cooled type

Heatsink for two-stage TE-cooled type

Temperature controller

A3179

A3179-01

C1103-04

Infrared detector module with preamp

P4631-01 (P8079-21)

Custom amplifiers for InAs photovoltaic detector

Specifications / Absolute maximum ratings

ꢀ

Absolute maximum ratings

Dimensional

Active

area

Thermistor

power

dissipation

(mW)

Reverse

voltage

V^R

Operating

temperature temperature

Storage

outline/

Window

material *

Type No.

Package

Cooling

Topr

(°C)

Tstg

(°C)

(mm)

(V)

P8079-01

P8079-11

P8079-21

P7163

➀

➁

➂

TO-5

TO-8

Non-cooled

One-stage TE-cooled

Two-stage TE-cooled

LN²

0.2

0.5

-40 to +60

-55 to +60

Metal dewer

* Window material S: sapphire glass

Electrical and optical characteristics (Typ. unless otherwise noted)

ꢀ

Measurement

condition

Element

temperature

Photo

sensitivity

Rise time

V^R=0 V

R^L=50 W

0 to 63 %

Terminal

capacitance

V^R=0 V

f=1 MHz

Peak

sensitivity

wavelength

Cut-off

wavelength

Shunt

resistance

Rsh

NEP

l=lp

(lp, 1200, 1)

l=lp

Type No.

Min.

(cm·Hz^1/2/W) (cm·Hz^1/2/W) (W/Hz^1/2)

1.5 × 10⁹2 × 10⁹4.4 × 10^-11

Typ.

(°C)

(µm)

3.45

3.30

3.25

3.00

(µm)

3.8

3.6

(A/W)

1.1

(µs)

0.1

(pF)

(W)

P8079-01

P8079-11

P8079-21

P7163

-10

-30

-196

200

7.5 × 10⁹1 × 10¹⁰8.9 × 10^-12

1.5 × 10¹⁰2 × 10¹⁰4.4 × 10^-12

3.5

3.1

1.3

0.1

150

1 × 10⁵3.5 × 10¹¹6 × 10¹¹1.5 × 10^-13

12 3 4

中文翻译

下载PDF

与P8079-11相关器件

型号	品牌	获取价格	描述	数据表
P8079-12	HAMAMATSU	获取价格	Infrared Sensor,
P8079-21	HAMAMATSU	获取价格	InAs photovoltaic detector
P8080A	ETC	获取价格	8-Bit Microprocessor
P8080A-1	ETC	获取价格	8-Bit Microprocessor
P8080A-1B	ETC	获取价格	8-Bit Microprocessor
P8080A-2	ETC	获取价格	8-Bit Microprocessor
P8080A-2B	ETC	获取价格	8-Bit Microprocessor
P8080AB	ETC	获取价格	8-Bit Microprocessor
P8085A	ETC	获取价格	8-Bit Microprocessor
P8085A-2	ETC	获取价格	8-Bit Microprocessor