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P8079-01

更新时间: 2024-11-17 22:22:23
品牌 Logo 应用领域
HAMAMATSU 光电光电器件
页数 文件大小 规格书
4页 155K
描述
InAs photovoltaic detector

P8079-01 技术参数

生命周期:Obsolete包装说明:TO-5, 3 PIN
Reach Compliance Code:unknownHTS代码:8541.40.80.00
风险等级:5.84Is Samacsys:N
配置:SINGLE功能数量:1
最高工作温度:60 °C最低工作温度:-40 °C
光电设备类型:OPTOELECTRONIC DEVICEBase Number Matches:1

P8079-01 数据手册

 浏览型号P8079-01的Datasheet PDF文件第2页浏览型号P8079-01的Datasheet PDF文件第3页浏览型号P8079-01的Datasheet PDF文件第4页 
I N F R A R E D D E T E C T O R  
InAs photovoltaic detector  
,
P8079 series P7163  
High-speed, low noise photovoltaic IR detectors  
InAs photovoltaic detectors cover a spectral response range equivalent to that of PbS detectors, but provide higher response speed and  
lower noise.  
Features  
Applications  
Thermoelectrically cooled type: high sensitivity  
and high-speed response  
Metal dewar type available for low light measurement  
Long-wavelength cut-off of up to 3.8 µm  
Easy-to-use detector/preamp modules available  
Gas analysis  
Infrared radiation measurement  
Infrared spectrophotometry  
FTIR  
Accessories (Optional)  
Heatsink for one-stage TE-cooled type  
Heatsink for two-stage TE-cooled type  
Temperature controller  
A3179  
A3179-01  
C1103-04  
Infrared detector module with preamp  
P4631-01 (P8079-21)  
Custom amplifiers for InAs photovoltaic detector  
Specifications / Absolute maximum ratings  
Absolute maximum ratings  
Dimensional  
Active  
area  
Thermistor  
power  
dissipation  
(mW)  
Reverse  
voltage  
VR  
Operating  
temperature temperature  
Storage  
outline/  
Window  
material *  
Type No.  
Package  
Cooling  
Topr  
(°C)  
Tstg  
(°C)  
(mm)  
(V)  
P8079-01  
P8079-11  
P8079-21  
P7163  
/S  
/S  
/S  
TO-5  
TO-8  
Non-cooled  
One-stage TE-cooled  
Two-stage TE-cooled  
LN2  
-
0.2  
-
0.5  
-40 to +60  
-55 to +60  
f1  
Metal dewer  
* Window material S: sapphire glass  
Electrical and optical characteristics (Typ. unless otherwise noted)  
Measurement  
condition  
Element  
temperature  
T
Photo  
sensitivity  
S
Rise time  
tr  
VR=0 V  
RL=50 W  
0 to 63 %  
Terminal  
capacitance  
Ct  
VR=0 V  
f=1 MHz  
Peak  
sensitivity  
wavelength  
lp  
Cut-off  
wavelength  
lc  
Shunt  
resistance  
Rsh  
*
NEP  
l=lp  
D
(lp, 1200, 1)  
l=lp  
Type No.  
Min.  
(cm·Hz1/2/W) (cm·Hz1/2/W) (W/Hz1/2)  
1.5 × 109 2 × 109 4.4 × 10-11  
Typ.  
(°C)  
25  
(µm)  
3.45  
3.30  
3.25  
3.00  
(µm)  
3.8  
3.6  
(A/W)  
1.1  
(µs)  
0.1  
(pF)  
80  
(W)  
10  
P8079-01  
P8079-11  
P8079-21  
P7163  
-10  
-30  
-196  
80  
200  
7.5 × 109 1 × 1010 8.9 × 10-12  
1.5 × 1010 2 × 1010 4.4 × 10-12  
10  
3.5  
3.1  
1.3  
0.1  
5
150  
1 × 105 3.5 × 1011 6 × 1011 1.5 × 10-13  
1

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