Datasheet > P6SMB510AHE3/5B

P6SMB510AHE3/5B

更新时间： 2024-09-18 03:54:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	99K
描述
Trans Voltage Suppressor Diode, 600W, 434V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN

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P6SMB510AHE3/5B 数据手册

P6SMB Series

Vishay General Semiconductor

Surface Mount TRANSZORB^®Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available inuni-directional and bi-directional

• 600 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty

cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

DO-214AA (SMB)

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

PRIMARY CHARACTERISTICS

V_BRuni-directional

6.8 V to 540 V

6.8 V to 220 V

600 W

TYPICAL APPLICATIONS

_BRbi-directional

Use in sensitive electronics protection against voltage

transients induced by inductive load switching

and lighting on ICs, MOSFET, signal lines of

sensor units for consumer, computer, industrial and

telecommunication.

P_PPM

P_D

5.0 W

I_FSM(uni-directional only)

T_Jmax.

100 A

150 °C

MECHANICAL DATA

Case: DO-214AA (SMB)

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC Q101 qualified)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional devices use CA suffix (e.g.

P6SMB10CA).

Electrical characteristics apply in both directions.

E3 suffix meets JESD 201 class 1A whisker test, HE3

suffix meets JESD 201 class 2 whisker test

Polarity: For uni-directional types the band denotes

cathode end, no marking on bi-directional types

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

VALUE

600

UNIT

Peak power dissipation with a 10/1000 µs waveform ⁽¹⁾⁽²⁾(Fig. 1)

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾

Power dissipation on infinite heatsink T_A= 50 °C ,

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Operating junction and storage temperature range

See next table

5.0

P_D

I_FSM

100

T_J, T_STG

- 65 to + 150

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

Document Number: 88370

Revision: 21-Oct-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

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P6SMB510AHE3/5B 替代型号

型号	品牌	替代类型	描述	数据表
P6SMB510A-M3/52	VISHAY	完全替代	TVS DIODE 434V 698V DO214AA
P6SMB510AHE3_A/I	VISHAY	完全替代	Trans Voltage Suppressor Diode, 600W, 434V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMB510A-E3/52	VISHAY	完全替代	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2

与P6SMB510AHE3/5B相关器件

型号	品牌	获取价格	描述	数据表
P6SMB510A-HE3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 434V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMB510AHE3_A/H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 434V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMB510AHE3_A/I	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 434V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMB510A-M3/52	VISHAY	获取价格	TVS DIODE 434V 698V DO214AA
P6SMB510A-M3/5B	VISHAY	获取价格	TVS DIODE 434V 698V DO214AA
P6SMB510C	LITTELFUSE	获取价格	P6SMB系列专门设计用于保护敏感电子设备不受闪电及其他瞬态电压现象引起的瞬态电压的影响。
P6SMB510CA	MDE	获取价格	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
P6SMB510CA	WEITRON	获取价格	600W Surface Mount Transient Voltage Suppressors
P6SMB510CA	VISHAY	获取价格	Transient Suppressor,
P6SMB510CA	SEMIKRON	获取价格	Excellent clamping capability

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