Datasheet > P6SMB510A-E3/52

P6SMB510A-E3/52

更新时间： 2024-11-26 13:39:51

品牌	Logo	应用领域
威世 - VISHAY		局域网光电二极管电视
页数	文件大小	规格书
5页	112K
描述
DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Transient Suppressor

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

P6SMB510A-E3/52 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	DO-214AA
包装说明：	R-PDSO-C2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	7.26
Is Samacsys：	N	其他特性：	EXCELLENT CLAMPING CAPABILITY
最大击穿电压：	535 V	最小击穿电压：	485 V
击穿电压标称值：	510 V	外壳连接：	ISOLATED
最大钳位电压：	698 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-214AA	JESD-30 代码：	R-PDSO-C2
JESD-609代码：	e3	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	600 W	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
最低工作温度：	-65 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性：	UNIDIRECTIONAL
最大功率耗散：	5 W	认证状态：	Not Qualified
最大重复峰值反向电压：	434 V	子类别：	Transient Suppressors
表面贴装：	YES	技术：	AVALANCHE
端子面层：	Matte Tin (Sn)	端子形式：	C BEND
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
Base Number Matches：	1

P6SMB510A-E3/52 数据手册

P6SMB Series

Vishay General Semiconductor

www.vishay.com

Surface Mount TRANSZORB

Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 600 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate (duty

cycle): 0.01 %

Available

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

SMB (DO-214AA)

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHE3 or P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

V_WM(uni-directional)

5.8 V to 459 V

TYPICAL APPLICATIONS

V_WM(bi-directional)

5.8 V to 185 V

6.8 V to 540 V

6.8 V to 220 V

600 W

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

V_BR(uni-directional)

_BR(bi-directional)

P_PPM

P_D

5.0 W

MECHANICAL DATA

_FSM(uni-directional only)

100 A

Case: SMB (DO-214AA)

T_Jmax.

150 °C

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/N-M3 - halogen-free, RoHS-compliant, commercial

grade

Polarity

Uni-directional, bi-directional

SMB (DO-214AA)

Package

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B, ..... and only available

for 250 V to 540 V type)

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional devices use CA suffix (e.g. P6SMB10CA).

Electrical characteristics apply in both directions.

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3, M3, HE3, and HM3 suffix meets JESD 201 class 2

whisker test

Polarity: for uni-directional types the band denotes cathode

end, no marking on bi-directional types

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

VALUE

600

UNIT

Peak power dissipation with a 10/1000 μs waveform ⁽¹⁾⁽²⁾(fig. 1)

Peak pulse current with a 10/1000 μs waveform ⁽¹⁾

Power dissipation on infinite heatsink at T_A= 50 °C

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Operating junction and storage temperature range

I_PPM

See next table

5.0

P_D

I_FSM

100

T_J, T_STG

-65 to +150

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal

(2)

Revision: 14-Jul-17

Document Number: 88370

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

P6SMB510A-E3/52 替代型号

型号	品牌	替代类型	描述	数据表
P6SMB510A-M3/52	VISHAY	完全替代	TVS DIODE 434V 698V DO214AA
P6SMB510A-E3/5B	VISHAY	完全替代	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
P6SMB510AHE3/52	VISHAY	完全替代	Trans Voltage Suppressor Diode, 600W, 434V V(RWM), Unidirectional, 1 Element, Silicon, DO-

与P6SMB510A-E3/52相关器件

型号	品牌	获取价格	描述	数据表
P6SMB510A-E3/5B	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
P6SMB510AHE3/52	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 434V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMB510AHE3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 434V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMB510A-HE3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 434V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMB510AHE3_A/H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 434V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMB510AHE3_A/I	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 434V V(RWM), Unidirectional, 1 Element, Silicon, DO-
P6SMB510A-M3/52	VISHAY	获取价格	TVS DIODE 434V 698V DO214AA
P6SMB510A-M3/5B	VISHAY	获取价格	TVS DIODE 434V 698V DO214AA
P6SMB510C	LITTELFUSE	获取价格	P6SMB系列专门设计用于保护敏感电子设备不受闪电及其他瞬态电压现象引起的瞬态电压的影响。
P6SMB510CA	MDE	获取价格	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

与P6SMB510A-E3/52相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

P6SMB510A-E3/52

P6SMB510A-E3/52 技术参数

P6SMB510A-E3/52 数据手册

P6SMB510A-E3/52 替代型号

与P6SMB510A-E3/52相关器件

与P6SMB510A-E3/52相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

P6SMB510A-E3/52

P6SMB510A-E3/52 技术参数

P6SMB510A-E3/52 数据手册

P6SMB510A-E3/52 替代型号

与P6SMB510A-E3/52相关器件

与P6SMB510A-E3/52相关文章

您还可以找

您在本页遇到什么问题？