Datasheet > P5506BDG

P5506BDG

更新时间： 2025-07-19 19:00:35

品牌	Logo	应用领域
微碧 - VBSEMI		/
页数	文件大小	规格书
5页	471K
描述

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中文翻译

获取价格

数据手册

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P5506BDG 数据手册

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

P5506BDG

NIKO-SEM

TO-252

Halogen-Free & Lead-Free

PRODUCT SUMMARY

1.GATE

2.DRAIN

3.SOURCE

V_(BR)DSS

R_DS(ON)

I_D

55mΩ

22A

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL

Drain-Source Voltage

LIMITS

UNITS

V_DS

V_GS

±20

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current¹

Power Dissipation

T_C= 25 °C

T_C= 70 °C

I_D

I_DM

P_D

T_C= 25 °C

T_C= 70 °C

Operating Junction & Storage Temperature Range

Lead Temperature (¹/₁₆” from case for 10 sec.)

T_j, T_stg

T_L

-55 to 150

275

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_θJ

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

2.5

°C / W

Junction-to-Ambient

R_θJA

¹Pulse width limited by maximum junction temperature.

ELECTRICAL CHARACTERISTICS (T_C= 25 °C, Unless Otherwise Noted)

LIMITS

UNIT

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX

STATIC

V_GS= 0V, I_D= 250µA

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

1.5

2.5

_DS= V_GS, I_D= 250µA

V_DS= 0V, V_GS= ±20V

V_DS= 48V, V_GS= 0V

±250 nA

Zero Gate Voltage Drain Current

I_DSS

µA

V_DS= 40V, V_GS= 0V, T_J= 55 °C

V_DS= 5V, V_GS= 10V

On-State Drain Current¹

I_D(ON)

V_GS= 4.5V, I_D= 8A

Drain-Source On-State Resistance¹

R_DS(ON)

mΩ

V_GS= 10V, I_D= 10A

REV 1.0

Aug-24-2009

12 3 4 5

中文翻译

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