Datasheet > P5510ED

P5510ED

更新时间： 2024-09-26 17:15:43

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	337K
描述
TO-252

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中文翻译

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数据手册

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P5510ED 数据手册

P-Channel Enhancement Mode

Field Effect Transistor

P5510ED

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

PRODUCT SUMMARY

V_(BR)DSS

-100V

R_DS(ON)

I_D

-27A

59mΩ

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

1. GATE

2. DRAIN

3. SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

-100

±25

UNITS

Gate-Source Voltage

V_GS

T_C= 25 °C

-27

Continuous Drain Current

I_D

T_C= 100 °C

-17

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

Power Dissipation

I_DM

I_AS

-103

-18

L = 1mH

E_AS

162

T_C= 25 °C

T_C= 100 °C

P_D

Junction & Storage Temperature Range

T_J, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNITS

°C / W

Junction-to-Case

1.4

Junction-to-Ambient

62.5

R_JA

¹Pulse width limited by maximum junction temperature.

REV1.0

M-48-5

12 3 4

中文翻译

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