Datasheet > P5515BD

P5515BD

更新时间： 2024-09-26 17:15:51

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	192K
描述
TO-252

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中文翻译

获取价格

数据手册

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P5515BD 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

P5515BD

NIKO-SEM

TO-252

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

150V

R_DS(ON)

I_D

1. GATE

2. DRAIN

3. SOURCE

55mΩ

24.6A

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

150

UNITS

Gate-Source Voltage

V_GS

±20

T_C= 25 °C

24.6

15.5

Continuous Drain Current

I_D

T_C= 100 °C

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

11.6

67.9

L = 1mH

E_AS

T_C= 25 °C

T_C= 100 °C

P_D

Power Dissipation

Junction & Storage Temperature Range

T_J, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNITS

°C / W

Junction-to-Case

1.5

Junction-to-Ambient

62.5

R_JA

¹Pulse width limited by maximum junction temperature.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

PARAMETER

SYMBOL

TEST CONDITIONS

STATIC

UNIT

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

150

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

1.3 1.9

2.3

V_DS= 0V, V_GS= ±20V

±100 nA

V_DS= 120V, V_GS= 0V

Zero Gate Voltage Drain Current

I_DSS

A

V_DS= 100V, V_GS= 0V, T_J= 125 °C

L-7-1

REV1.1

12 3 4

中文翻译

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