Datasheet > P5515BV

P5515BV

更新时间： 2024-09-26 17:15:19

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	208K
描述
SOP-8

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中文翻译

获取价格

数据手册

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P5515BV 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

P5515BV

SOP-8

Halogen-Free & Lead-Free

NIKO-SEM

PRODUCT SUMMARY

V_(BR)DSS

150V

R_DS(ON)

I_D

3.4A

55mΩ

G: GATE

D: DRAIN

S: SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

150

UNITS

Gate-Source Voltage

V_GS

±20

T_A= 25 °C

T_A= 70 °C

3.4

Continuous Drain Current

I_D

2.7

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

L = 1mH

E_AS

128

T_A= 25 °C

T_A= 70 °C

1.5

Power Dissipation

P_D

Junction & Storage Temperature Range

T_J, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

°C / W

Junction-to-Ambient²

R_JA

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

PARAMETER

SYMBOL

TEST CONDITIONS

UNIT

STATIC

_GS= 0V, I_D= 250A

_DS= V_GS, I_D= 250A

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

150

1.3 1.75 2.3

V_DS= 0V, V_GS= ±20V

V_DS= 120V, V_GS= 0V

±100

A

Zero Gate Voltage Drain Current

I_DSS

V_DS= 100V, V_GS= 0V, T_J= 125 °C

V_GS= 4.5V, I_D= 3A

44.5 65

Drain-Source On-State

Resistance¹

mΩ

R_DS(ON)

V_GS=10V, I_D= 3A

H-16-4

REV 1.0

12 3 4

中文翻译

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