Datasheet > P5510EK

P5510EK

更新时间： 2024-09-26 17:15:23

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
5页	392K
描述
PDFN 5x6

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中文翻译

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数据手册

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P5510EK 数据手册

P-Channel Enhancement Mode

Field Effect Transistor

P5510EK

PDFN 5x6P

Halogen-Free & Lead-Free

NIKO-SEM

PRODUCT SUMMARY

V_(BR)DSS

-100V

R_DS(ON)

I_D

-27A

59mΩ

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

1. GATE

2. DRAIN

3. SOURCE

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

-100

±25

-27

UNITS

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current

Pulsed Drain Current¹

Continuous Drain Current

I_D

I_DM

I_D

T_C= 100 °C

-17

-55

T_A= 25 °C

T_A= 70 °C

-4.7

-3.8

-18

Avalanche Current

Avalanche Energy

I_AS

L = 1mH

E_AS

162

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

Power Dissipation

Power Dissipation³

P_D

2.8

P_D

1.8

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL MAXIMUM

UNITS

Junction-to-Ambient²

t ≦10s

R_JA

R_JC

Junction-to-Ambient²

°C / W

Steady-State

Junction-to-Case

1.4

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

³The Power dissipation is based on R_JAt ≦10s value.

REV1.0

M-48-5

12 3 4 5

中文翻译

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