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P4KE250-G PDF预览

P4KE250-G

更新时间: 2024-09-15 07:17:59
品牌 Logo 应用领域
上华 - COMCHIP 瞬态抑制器二极管
页数 文件大小 规格书
6页 128K
描述
400W Transient Voltage Suppressor

P4KE250-G 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.67
Is Samacsys:N击穿电压标称值:250 V
最大钳位电压:47.4 V二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码:e3极性:UNIDIRECTIONAL
最大重复峰值反向电压:202 V子类别:Transient Suppressors
表面贴装:NO端子面层:Tin (Sn)
Base Number Matches:1

P4KE250-G 数据手册

 浏览型号P4KE250-G的Datasheet PDF文件第2页浏览型号P4KE250-G的Datasheet PDF文件第3页浏览型号P4KE250-G的Datasheet PDF文件第4页浏览型号P4KE250-G的Datasheet PDF文件第5页浏览型号P4KE250-G的Datasheet PDF文件第6页 
400W Transient Voltage Suppressor  
P4KE-G Series  
Stand-off Voltage: 6.8 ~ 600V  
Power Dissipation: 400 Watts  
RoHS Device  
DO-41  
Features  
-Glass passivated chip  
-Low leakage  
-Uni and Bidirection unit  
0.033(0.84)  
0.028(0.71)  
DIA.  
1.000(25.40)  
MIN.  
-Excellent clamping capability  
-The plastic material has UL recognition 94V-0  
-Fast response time: typically less than 1.0pS from  
0 volts to BV min  
0.205(5.21)  
0.165(4.19)  
0.117(2.97)  
0.090(2.29)  
DIA.  
Mechanical Data  
-Case: Molded plastic DO-41  
1.000(25.40)  
MIN.  
-Polarity: By cathode band denotes unidirectional  
device none cathode band denoted bi-directional  
device  
-Weight: 0.34 grams  
Dimensions in inches and (millimeter)  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Symbol  
Parameter  
Value  
Unit  
W
Peak power dissipation a 10/1000μs waveform  
PPP  
400  
(Note 1)  
Peak pulse current with a 10/1000μs waveform  
IPP  
PD  
See Next Table  
1.0  
A
(Note 1)  
O
W
C
Power dissipation on infinite heatsink at TL=75  
Peak forward surge current, 8.3mS single  
half sine-wave unidirectional only(Note 2)  
IFSM  
VF  
40  
A
V
Maximum instantaneous forward voltage  
at 25A for unidirectional only (Note 3)  
3.5/5.0  
Operating junction and storage temperature  
range  
OC  
TJ, TSTG  
-55 to +150  
NTOES:  
(1) Non-repetitive current pulse, per fig.5 and derated above TA=25 OC per fig. 1.  
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave,duty cycle=4 pulses per minute maximum.  
(3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V.  
REV:B  
Page 1  
QW-BTV05  

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