5秒后页面跳转
P270PH02DJ0 PDF预览

P270PH02DJ0

更新时间: 2024-09-16 20:10:19
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 208K
描述
Silicon Controlled Rectifier, 355000mA I(T), 200V V(DRM)

P270PH02DJ0 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84Is Samacsys:N
标称电路换相断开时间:25 µs关态电压最小值的临界上升速率:50 V/us
最大直流栅极触发电流:200 mA最大直流栅极触发电压:3 V
最大维持电流:600 mA最大漏电流:30 mA
通态非重复峰值电流:6500 A最大通态电流:355000 A
最高工作温度:125 °C最低工作温度:-40 °C
断态重复峰值电压:200 V子类别:Silicon Controlled Rectifiers
表面贴装:NO触发设备类型:SCR
Base Number Matches:1

P270PH02DJ0 数据手册

 浏览型号P270PH02DJ0的Datasheet PDF文件第2页 

与P270PH02DJ0相关器件

型号 品牌 获取价格 描述 数据表
P270PH02DJO IXYS

获取价格

Silicon Controlled Rectifier, 355A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element
P270PH02DKO IXYS

获取价格

Silicon Controlled Rectifier, 355A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element
P270PH02DL IXYS

获取价格

Silicon Controlled Rectifier, 355 A, 200 V, SCR
P270PH02DL0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),355A I(T),TO-209AB
P270PH02DLO IXYS

获取价格

Silicon Controlled Rectifier, 355A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element
P270PH02DN0 IXYS

获取价格

Silicon Controlled Rectifier, 355000mA I(T), 200V V(DRM)
P270PH02DNO IXYS

获取价格

Silicon Controlled Rectifier, 355A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element
P270PH02EJ IXYS

获取价格

Silicon Controlled Rectifier, 355A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element
P270PH02EJO IXYS

获取价格

Silicon Controlled Rectifier, 355 A, 200 V, SCR
P270PH02EK IXYS

获取价格

Silicon Controlled Rectifier, 355A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element