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P1114-04

更新时间： 2024-09-13 22:34:15
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HAMAMATSU 光敏电阻
页数 文件大小 规格书
2页 143K
描述
CdS photoconductive cell

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P1114-04 数据手册

 浏览型号P1114-04的Datasheet PDF文件第2页 
V I S I B L E D E T E C T O R  
CdS photoconductive cell  
Metal package type  
Hermetically sealed for high reliability  
CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These  
sensors are non-polar resistive elements with spectral response characteristics close to the human eye (luminous efficiency), thus making their  
operating circuits simple and small.  
Features  
Applications  
Variety of package size  
Sensor for office machine  
Highly resistant to moisture and dust  
Safety device for heating system and boiler  
(flame monitor for oil burner)  
Night/day check sensor and sunlight sensor for air conditioner  
Alarm and safety sensor  
Absolute maximum ratings / Characteristics (Typ. Ta=25 °C, unless otherwise noted)  
ꢀ
Absolute maximum ratings  
Characteristics *1  
5
Resistance *2  
Response time 10  
*
Peak  
sensitivity  
wavelength  
lp  
lx  
Power Ambient  
Supply  
4
*
100  
10  
g
Dimensional  
outline  
dissipation temperature  
voltage  
Rise time Fall time  
tf  
0 lx *3  
Type No.  
10 lx, 2856 K  
P
Ta  
tr  
Min.  
(kW)  
Max.  
(kW)  
Min.  
(MW)  
(Vdc)  
100  
(mW)  
(°C)  
(nm)  
(ms)  
(ms)  
100 to 10 lx  
5M type (TO-18)  
P1114-01  
P1114-04  
6M type (f5.5)  
P930  
630  
570  
13  
15  
39  
45  
1
60  
40  
25  
20  
➀
➁
30  
50  
-30 to +50  
-30 to +70  
0.80  
10  
150  
560  
7
23  
0.5  
0.68  
60  
90  
8M type (TO-5)  
P201B  
-30 to +50  
-30 to +60  
560  
520  
21  
20  
14  
4.4  
8
63  
60  
43  
13  
24  
3.7  
20  
10  
0.85  
0.90  
25  
30  
20  
10  
100  
50  
P201D  
200  
100  
P368  
➂
➃
-30 to +50  
620  
20  
0.85  
35  
20  
P380  
P467  
-30 to +60  
-30 to +80  
520  
560  
5
0.90  
0.55  
50  
70  
20  
100  
P534  
1.3  
0.05  
100  
12M type (TO-8)  
P621  
150  
400  
570  
540  
1.3  
5
3.7  
15  
0.3  
1.0  
0.75  
0.80  
80  
40  
40  
30  
300  
-30 to +60  
P3872  
*1: All characteristics are measured after exposure to light (100 to 500 lx) for one to two hours.  
*2: The light source is a standard tungsten lamp operated at a color temperature of 2856 K.  
*3: Measured 10 seconds after removal of light of 10 lx.  
*4: Typical gamma characteristics (within ±0.10 variations) between 100 lx to 10 lx  
log (R100) - log (R10  
)
γ 100  
=
10  
log (E100) - log (E10  
)
E100, E10: illuminance 100 lx, 10 lx  
R100, R10: resistance at 100 lx and 10 lx respectively  
*5: The rise time is the time required for the sensor resistance to reach 63 % of the saturated conductance level (resistance  
when fully illuminated). The fall time is the time required for the sensor resistance to decay from the saturated conductance  
level to 37 %.  
1
12

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