生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | DIP, | 针数: | 28 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.84 |
最长访问时间: | 35 ns | JESD-30 代码: | R-CDIP-T28 |
JESD-609代码: | e0 | 长度: | 35.56 mm |
内存密度: | 65536 bit | 内存集成电路类型: | NON-VOLATILE SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 28 | 字数: | 8192 words |
字数代码: | 8000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 8KX8 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | DIP | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
认证状态: | Not Qualified | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 宽度: | 7.62 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
P10C68-35/CG/DPBS | ZARLINK |
获取价格 |
Non-Volatile SRAM, 8KX8, 35ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28 | |
P10C68-35/IG/DCBS | MICROSEMI |
获取价格 |
8KX8 NON-VOLATILE SRAM, 35ns, CDIP28, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-28 | |
P10C68-35/IG/DPBS | MICROSEMI |
获取价格 |
8KX8 NON-VOLATILE SRAM, 35ns, PDIP28, 0.300 INCH, PLASTIC, DIP-28 | |
P10C68-35CG | ZARLINK |
获取价格 |
CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM | |
P10C68-35CGDCBS | ZARLINK |
获取价格 |
CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM | |
P10C68-35CGDPBS | ZARLINK |
获取价格 |
CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM | |
P10C68-35DCBS | ZARLINK |
获取价格 |
CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM | |
P10C68-35DPBS | ZARLINK |
获取价格 |
CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM | |
P10C68-35IG | ZARLINK |
获取价格 |
CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM | |
P10C68-35IGDCBS | ZARLINK |
获取价格 |
CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |