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P095RH12F2K PDF预览

P095RH12F2K

更新时间: 2024-09-21 13:48:43
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 260K
描述
Silicon Controlled Rectifier, 175A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element

P095RH12F2K 技术参数

生命周期:Obsolete包装说明:POST/STUD MOUNT, O-MUPM-H3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84Is Samacsys:N
其他特性:HIGH RELIABILITY标称电路换相断开时间:40 µs
配置:SINGLE关态电压最小值的临界上升速率:200 V/us
最大直流栅极触发电流:200 mA最大直流栅极触发电压:3 V
最大维持电流:600 mAJESD-30 代码:O-MUPM-H3
元件数量:1端子数量:3
封装主体材料:METAL封装形状:ROUND
封装形式:POST/STUD MOUNT认证状态:Not Qualified
最大均方根通态电流:175 A重复峰值关态漏电流最大值:20000 µA
断态重复峰值电压:1200 V重复峰值反向电压:1200 V
表面贴装:NO端子形式:HIGH CURRENT CABLE
端子位置:UPPER触发设备类型:SCR
Base Number Matches:1

P095RH12F2K 数据手册

 浏览型号P095RH12F2K的Datasheet PDF文件第2页 

与P095RH12F2K相关器件

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P095RH12F2K0 IXYS

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Silicon Controlled Rectifier, 175000mA I(T), 1200V V(DRM)
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Silicon Controlled Rectifier, 175A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element
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Silicon Controlled Rectifier, 175000mA I(T), 1200V V(DRM)
P095RH12FGO IXYS

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Silicon Controlled Rectifier, 175 A, 1200 V, SCR
P095RH12FH IXYS

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Silicon Controlled Rectifier, 175A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element
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Silicon Controlled Rectifier, 175000mA I(T), 1200V V(DRM)
P095RH12FJ IXYS

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Silicon Controlled Rectifier, 175A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element
P095RH12FJ0 IXYS

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Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,1.2KV V(DRM),175A I(T),TO-208VA
P095RH12FJO IXYS

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Silicon Controlled Rectifier, 175A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element