生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 标称电路换相断开时间: | 25 µs |
关态电压最小值的临界上升速率: | 50 V/us | 最大直流栅极触发电流: | 200 mA |
最大直流栅极触发电压: | 3 V | 最大维持电流: | 600 mA |
最大漏电流: | 20 mA | 通态非重复峰值电流: | 1800 A |
最大通态电流: | 356000 A | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 断态重复峰值电压: | 600 V |
子类别: | Silicon Controlled Rectifiers | 表面贴装: | NO |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
P095CH06DJO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element | |
P095CH06E2K0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),356A I(T),TO-200AB | |
P095CH06EG0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),356A I(T),TO-200AB | |
P095CH06EGO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428 A, 600 V, SCR | |
P095CH06EH | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB | |
P095CH06EH0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),356A I(T),TO-200AB | |
P095CH06EHO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element | |
P095CH06EJ | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428 A, 600 V, SCR, TO-200AB | |
P095CH06EJ0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 356000mA I(T), 600V V(DRM) | |
P095CH06EJO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element |