生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-CEDB-N2 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.84 | 其他特性: | HIGH RELIABILITY |
配置: | SINGLE | 最大直流栅极触发电流: | 200 mA |
JESD-30 代码: | O-CEDB-N2 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | ROUND | 封装形式: | DISK BUTTON |
认证状态: | Not Qualified | 最大均方根通态电流: | 428 A |
断态重复峰值电压: | 600 V | 重复峰值反向电压: | 600 V |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | END | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
P095CH06E2K0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),356A I(T),TO-200AB | |
P095CH06EG0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),356A I(T),TO-200AB | |
P095CH06EGO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428 A, 600 V, SCR | |
P095CH06EH | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB | |
P095CH06EH0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),356A I(T),TO-200AB | |
P095CH06EHO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element | |
P095CH06EJ | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428 A, 600 V, SCR, TO-200AB | |
P095CH06EJ0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 356000mA I(T), 600V V(DRM) | |
P095CH06EJO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element | |
P095CH06F2K | IXYS |
获取价格 |
Silicon Controlled Rectifier, 428A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB |