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P095CH08CGO PDF预览

P095CH08CGO

更新时间: 2024-11-10 17:01:07
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 257K
描述
Silicon Controlled Rectifier, 428A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element

P095CH08CGO 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:HIGH RELIABILITY
配置:SINGLE最大直流栅极触发电流:200 mA
JESD-30 代码:O-CEDB-N2元件数量:1
端子数量:2封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:428 A
断态重复峰值电压:800 V重复峰值反向电压:800 V
表面贴装:YES端子形式:NO LEAD
端子位置:END触发设备类型:SCR
Base Number Matches:1

P095CH08CGO 数据手册

 浏览型号P095CH08CGO的Datasheet PDF文件第2页 

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Silicon Controlled Rectifier, 428 A, 800 V, SCR
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Silicon Controlled Rectifier, 356000mA I(T), 800V V(DRM)
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Silicon Controlled Rectifier, 428A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element
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Silicon Controlled Rectifier, 428 A, 800 V, SCR, TO-200AB
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Silicon Controlled Rectifier, 428A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element
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Silicon Controlled Rectifier, 428A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element
P095CH08DJ IXYS

获取价格

Silicon Controlled Rectifier, 428A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB