5秒后页面跳转
P0327WC12E PDF预览

P0327WC12E

更新时间: 2024-12-01 03:01:51
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
12页 1519K
描述
Silicon Controlled Rectifier, 525000mA I(T), 1200V V(DRM),

P0327WC12E 数据手册

 浏览型号P0327WC12E的Datasheet PDF文件第2页浏览型号P0327WC12E的Datasheet PDF文件第3页浏览型号P0327WC12E的Datasheet PDF文件第4页浏览型号P0327WC12E的Datasheet PDF文件第5页浏览型号P0327WC12E的Datasheet PDF文件第6页浏览型号P0327WC12E的Datasheet PDF文件第7页 
Date:- 07 August 2012  
Data Sheet Issue:- K1  
Fast Turn-off Thyristor  
Types P0327WC08# & P0327WC12#  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
800-1200  
V
V
V
V
800-1200  
800-1200  
900-1300  
MAXIMUM  
LIMITS  
330  
OTHER RATINGS  
UNITS  
IT(AV)  
IT(AV)  
IT(RMS)  
IT(d.c.)  
ITSM  
ITSM2  
I2t  
Mean on-state current, Tsink=55°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 2)  
Nominal RMS on-state current, Tsink=25°C, (note 2)  
D.C. on-state current, Tsink=25°C, (note 4)  
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)  
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)  
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)  
I2t capacity for fusing tp=10ms, VRM10V, (note 5)  
Maximum rate of rise of on-state current (repetitive), (Note 6)  
Maximum rate of rise of on-state current (non-repetitive), (Note 6)  
Peak forward gate voltage  
A
A
120  
670  
A
525  
A
3250  
3575  
63.9×1033  
47×103  
500  
A
A
A2s  
A2s  
A/µs  
A/µs  
V
I2t  
(di/dt)cr  
1000  
12  
VFGM  
IFGM  
VRGM  
PG(AV)  
PGM  
VGD  
Peak forward gate current  
18  
A
Peak reverse gate voltage  
5
V
Mean forward gate power  
1.5  
W
W
V
Peak forward gate power (100µs pulse width)  
Non-trigger gate voltage, (Note 7)  
60  
0.25  
THS  
Operating temperature range  
-40 to +125  
-40 to +150  
°C  
°C  
Tstg  
Storage temperature range  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
6) VD=80% VDRM, IFG=1A, tr1µs, Tcase=125°C.  
7) Rated VDRM  
.
Data Sheet. Types P0327WC08# to P0327WC12# Issue K1  
Page 1 of 12  
August 2012  

与P0327WC12E相关器件

型号 品牌 获取价格 描述 数据表
P0327WC12F LITTELFUSE

获取价格

Trigger Device
P032FB1CP1 PREMO

获取价格

Third generation of planar transformers
P032FB1CP2 PREMO

获取价格

Third generation of planar transformers
P032PP1CP1 PREMO

获取价格

Third generation of planar transformers
P0330FA JJM

获取价格

半导体放电管
P0330SC04A LITTELFUSE

获取价格

Silicon Controlled Rectifier,
P0330SC04C LITTELFUSE

获取价格

Silicon Controlled Rectifier,
P0330SC04D IXYS

获取价格

Silicon Controlled Rectifier, 355A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element
P0330SC06C IXYS

获取价格

Silicon Controlled Rectifier, 355A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element
P0330SC06D IXYS

获取价格

Silicon Controlled Rectifier, 355A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element