Datasheet > P0327WC12E

P0327WC12E

更新时间： 2022-12-01 19:05:03

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
12页	1519K
描述
Silicon Controlled Rectifier, 525000mA I(T), 1200V V(DRM),

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P0327WC12E 数据手册

Fast turn-off thyristor types P0327WC08# & P0327WC12#

Characteristics

PARAMETER

MIN.

TYP. MAX. TEST CONDITIONS (Note 1)

UNITS

V_TM

V_T0

r_T

Maximum peak on-state voltage

Threshold voltage

2.17 I_TM=715A

1.55

0.87

Slope resistance

mΩ

V/µs

(dv/dt)_crCritical rate of rise of off-state voltage

200

V_D=80% V_DRM

Rated V_DRM

Rated V_RRM

T_j=25°C

I_DRM

I_RRM

V_GT

I_GT

Peak off-state current

Peak reverse current

Gate trigger voltage

Gate trigger current

Holding current

3.0

200 T_j=25°C

V_D=6V, I_T=1A

µC

I_H

600 T_j=25°C

Q_rr

Recovered charge

I_TM=300A, t_p=500µs, di/dt=20A/µs, V_r=50V

Q_ra

Recovered charge, 50% Chord

I_TM=300A, t_p=500µs, di/dt=20A/µs, V_r=50V,

V_dr=80%V_DRM, dV_dr/dt=20V/µs

I_TM=300A, t_p=500µs, di/dt=50A/µs, V_r=50V,

V_dr=80%V_DRM, dV_dr/dt=200V/µs

t_q

Turn-off time (note 2)

µs

0.095 Double side cooled

K/W

R_thJK

Thermal resistance, junction to heatsink

0.190 Single side cooled

Mounting force

Weight

3.3

5.5

W_t

Notes:-

1) Unless otherwise indicated T_j=125°C.

2) The required t_q(specified with dV_dr/dt=200V/µs) is represented by an ‘#’ in the device part number. See ordering information for

details of t_qcodes.

Data Sheet. Types P0327WC08# to P0327WC12# Issue K1

Page 2 of 12

August 2012

123 4 5 6 7...12

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