Datasheet > P0327WC12E

P0327WC12E

更新时间： 2022-12-01 19:05:03

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
12页	1519K
描述
Silicon Controlled Rectifier, 525000mA I(T), 1200V V(DRM),

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P0327WC12E 数据手册

Fast turn-off thyristor types P0327WC08# & P0327WC12#

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

_DRMV_DSMV_RRM

V_RSM

900

1300

V_DV_R

DC V

540

Voltage Grade

800

1200

810

2.0 Extension of Voltage Grades

This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 Extension of Turn-off Time

This Report is applicable to other t_q/re-applied dv/dt combinations when supply has been agreed by

Sales/Production.

4.0 Repetitive dv/dt

Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T_jbelow 25°C.

6.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not

exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the

total device current including that from any local snubber network.

7.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

8.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

9.0 Maximum Operating Frequency

The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

(t_q) and for the off-state voltage to reach full value (t_v), i.e.

f ^max=

tpulse +tq +tv

Data Sheet. Types P0327WC08# to P0327WC12# Issue K1

Page 3 of 12

August 2012

1 234 5 6 7...12

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