Datasheet > P0327WC12E

P0327WC12E

更新时间： 2022-12-01 19:05:03

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
12页	1519K
描述
Silicon Controlled Rectifier, 525000mA I(T), 1200V V(DRM),

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P0327WC12E 数据手册

Fast turn-off thyristor types P0327WC08# & P0327WC12#

10.0 On-State Energy per Pulse Characteristics

These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by

the frequency ratings.

Let E_pbe the Energy per pulse for a given current and pulse width, in joules

Let R_th(J-Hs)be the steady-state d.c. thermal resistance (junction to sink)

and T_SINKbe the heat sink temperature.

Then the average dissipation will be:

W_AV= E_P⋅ f and T_{SINK (max.)}= 125 −

(

W_AV⋅ R_th

)

(

J −Hs

)

11.0 Reverse recovery ratings

(i) Q_rais based on 50% I_rmchord as shown in Fig. 1 below.

Fig. 1

(ii) Q_rris based on a 100µs integration time.

100µs

Q_rr= i_rr.dt

i.e.

∫

K Factor =

(iii)

12.0 Reverse Recovery Loss

12.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and

reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be

constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can

then be evaluated from:

T_{SINK (new)}= T_{SINK (original )}− E ⋅

(

k + f ⋅ R_th

)

(

J −Hs

)

where k = 0.227 (°C/W)/s

E = Area under reverse loss waveform per pulse in joules (W.s.)

f = rated frequency Hz at the original heat sink temperature.

_th(J-Hs)= d.c. thermal resistance (°C/W).

Data Sheet. Types P0327WC08# to P0327WC12# Issue K1

Page 4 of 12

August 2012

1 2 345 6 7...12

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