是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-3 | 包装说明: | CASE 1-07, TO-3, 2 PIN |
针数: | 2 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.49 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 16 A |
集电极-发射极最大电压: | 140 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 4 | JEDEC-95代码: | TO-204AA |
JESD-30 代码: | O-MBFM-P2 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 200 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 200 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 1 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N5631/D | ONSEMI | High-Voltage High-Power Transistors |
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2N5631E3 | MICROSEMI | Power Bipolar Transistor, 16A I(C), 140V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL |
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2N5631G | ONSEMI | 16A, 140V, NPN, Si, POWER TRANSISTOR, TO-204AA, CASE 1-07, TO-3, 2 PIN |
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2N5632 | CENTRAL | SILICON POWER TRANSISTOR |
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2N5632 | SEME-LAB | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
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2N5632 | SAVANTIC | Silicon NPN Power Transistors |
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