生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-MSFM-P3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 其他特性: | HIGH RELIABILITY |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 8 A |
最大漏源导通电阻: | 0.75 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-254AA | JESD-30 代码: | R-MSFM-P3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 30 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
OM8P20ST | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-257AA |
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OM8P20STT | INFINEON | Power Field-Effect Transistor, 8A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal |
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OM8P20STV | INFINEON | Power Field-Effect Transistor, 8A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal |
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OM8P25CSAT | INFINEON | Power Field-Effect Transistor, 8A I(D), 250V, 2ohm, 1-Element, P-Channel, Silicon, Metal-o |
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OM8P25CST | INFINEON | Power Field-Effect Transistor, 8A I(D), 250V, 2.08ohm, 1-Element, P-Channel, Silicon, Meta |
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OM8P25CSTM | INFINEON | Power Field-Effect Transistor, 8A I(D), 250V, 2.08ohm, 1-Element, P-Channel, Silicon, Meta |
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