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OM9001SST PDF预览

OM9001SST

更新时间: 2024-09-23 15:47:03
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
4页 50K
描述
Power Field-Effect Transistor, 30A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SIP-6

OM9001SST 数据手册

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OM9001SS OM9003SS  
OM9002SS OM9004SS  
POWER MOSFET AND HIGH EFFICIENCY RECTIFIER  
IN A SINGLE HERMETIC ISOLATED SIP PACKAGE  
100V Thru 500V, Up To 30 Amp, N-Channel  
MOSFET With Back To Back Zener Gate  
Clamp Protection And Uncommitted  
Ultra-Fast Recovery 35 To 50 nsec Rectifier  
FEATURES  
• Isolated Single In Line Hermetic Package  
• Bi-Lateral Zener Gate Protection  
• Uncommitted Power MOSFET And High Efficiency Power Rectifier  
• Low RDS(on)  
• Available Hi-Rel Screened To MIL-S-19500, TX, TXV and S Levels  
DESCRIPTION  
This series of products feature the latest advanced MOSFET and rectifier in a single,  
cost effective hermetically sealed package. They are ideally suited for Military  
requirements where small size, high performance and high reliability are required,  
and in applications such as flyback switching power supplies, motor control choppers,  
and high energy pulse circuits. The MOSFET gates are protected using bi-lateral  
zener clamps.  
MAXIMUM RATINGS  
PART  
MOSFET  
RDS(on)  
.065  
.095  
.3  
RECTIFIER  
VFM  
NUMBER  
VDS  
ID  
PIV  
trr  
3.1  
OM9001SS  
OM9002SS  
OM9003SS  
OM9004SS  
100 V  
200 V  
400 V  
500 V  
30 A  
25 A  
15 A  
13 A  
100 V  
200 V  
400 V  
500 V  
1.40 A  
1.20 A  
1.40 A  
1.55 A  
35 ns  
35 ns  
50 ns  
50 ns  
.4  
SCHEMATIC  
PIN CONNECTION  
Drain  
Pin 1  
Cathode  
Pin 5  
Pin 3  
Gate  
D
1
S
2
G N/L  
C
5
A
6
Pin 2  
Source  
Pin 6  
Anode  
3
4
4 11 R3  
Supersedes 1 07 R2  
3.1 - 197  

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