Datasheet > OM8P25SAM

OM8P25SAM

更新时间： 2024-09-24 06:56:07

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
6页	61K
描述
Power Field-Effect Transistor, 8A I(D), 250V, 2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,

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数据手册

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OM8P25SAM 数据手册

OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST

OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM8P25SA OM2P50SA

POWER MOSFET IN HERMETIC ISOLATED

JEDEC PACKAGE, P-CHANNEL

60V To 500V P-Channel MOSFET In A

Hermetic Package

FEATURES

• Isolated Hermetic Metal Package

• P-Channel

• Fast Switching, Low Drive Current

• Ease of Paralleling For Added Power

• Available Screened To MIL-S-19500, TX, TXV And S Level

• Ceramic Feedthroughs Available

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET

and packaging technology. They are ideally suited for Military requirements where

small size, high performance and high reliability are required, and in applications such

as switching power supplies, motor controls, inverters, choppers, audio amplifiers and

high energy pulse circuits.

MAXIMUM RATINGS (T_J= 25°C unless otherwise noted.)

BASIC

R_DS(on)( )

V_DS(V)

I_D(A)

PART NUMBER

OM23P06

OM20P10

OM12P10

OM8P20

TO-257AA

TO-254AA

.12

.16

.20

.34

.80

2.08

6.10

3.1

100

200

250

500

.16

.30

.75

2.00

6.00

OM8P25

OM2P50

ORDERING INFORMATION

PIN CONNECTION

TO-257AA

TO-254AA

Example:

OM20P10

Basic Part Case Screening

Number

Style

Level

Case Style:

ST = TO-257AA

SA = TO-254AA

Pin 1: Drain

Pin 2: Source

Pin 3: Gate

Standard Products are supplied with

glass feedthroughs. For ceramic

feedthroughs, add letter “C” to part

number: Example - OM20P10CST.

1 2 3

1 2

3.1 - 31

4 11 R0

12 3 4 5 6

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与OM8P25SAM相关器件

型号	品牌	获取价格	描述	数据表
OM8P25SAT	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 250V, 2ohm, 1-Element, P-Channel, Silicon, Metal-o
OM8P25SAV	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 250V, 2ohm, 1-Element, P-Channel, Silicon, Metal-o
OM8P25ST	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 250V V(BR)DSS \| 8A I(D) \| TO-257AA
OM8P25STM	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 250V, 2.08ohm, 1-Element, P-Channel, Silicon, Meta
OM8P25STT	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 250V, 2.08ohm, 1-Element, P-Channel, Silicon, Meta
OM8P25STV	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 250V, 2.08ohm, 1-Element, P-Channel, Silicon, Meta
OM9001SS	ETC	获取价格	TRANSISTOR \| MOSFET POWER MODULE \| INDEPENDENT \| 100V V(BR)DSS \| 30A I(D)
OM9001SST	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Me
OM9002SS	ETC	获取价格	TRANSISTOR \| MOSFET POWER MODULE \| INDEPENDENT \| 200V V(BR)DSS \| 25A I(D)
OM9002SSPBF	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 200V, 0.095ohm, 1-Element, N-Channel, Silicon, Me