Datasheet > NXT4556AUR

NXT4556AUR

更新时间： 2024-04-09 18:59:06

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
19页	8116K
描述
SIM card interface level translatorProduction

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NXT4556AUR 数据手册

Nexperia

NXT4556AUR

SIM card interface level translator

aaa-034373

3.5

IO_SIM

(V)

IO HOST

(V)

IO SIM

2.5

1.5

0.5

-0.5

IO_HOST

1.5

0.5

-0.5

-200

-100

100

200

t (ns)

Fig. 4. LOW to HIGH transition for IO_HOST to IO_SIM communication

Looking at the input signal, the first part of the LOW to HIGH transition is an exponential curve

caused by the I/O node capacitance being charged via the pull-up resistor. The second part starts

when the input signal crosses the input switching level. The rising edge is accelerated dramatically

by the PMOST that is turned on by the one shot on the input side.

In case of a communication error or some other unforeseen incident that may drive both connected

sides of the drivers at the same time, the internal logic automatically prevents stuck-at situation.

This ensures that both I/Os will return to HIGH level once released from being driven LOW.

In shut down mode, the control circuit disables all output stages. Additionally, in shut down mode,

the pull-up resistor on IO_SIM side is disabled, and all pull-down resistors R_pdon SIM side are

enabled, pulling LOW the pins on the SIM side. The shut down sequence is explained in more

detail in Section 8.3.

8.3. Shutdown sequence

The ISO 7816-3 specification specifies the shutdown sequence for the SIM card signals to ensure

that the card is properly disabled for power savings. Also, during hot swap, the orderly shutdown of

these signals helps to avoid any improper write and corruption of data.

When V_{CC_SIM}drops below V_{dis(UVLO_AC)}, the shutdown sequence is initiated. Fig. 5 illustrates the

shutdown sequence initiated by V_{CC_SIM}being powered down.

The shut down sequence starts by pulling down the RST_SIM output. Once RST_SIM is turned

LOW, CLK_SIM and IO_SIM are pulled LOW sequentially, one-by-one. Internal pull-down resistors

on the SIM pins are used to pull the SIM channels LOW. The internal pull-down resistors, R_pd, that

pull down the three pins on the SIM side are shown in Fig. 1. The shutdown sequence is completed

in a few microseconds. The interval time (Δt), is typically 4 μs.

NXT4556AUR

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 1 — 5 December 2023

6 / 19

1...3 4 567 8 9...19

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