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NXPLQSC20650W PDF预览

NXPLQSC20650W

更新时间: 2022-02-26 14:16:56
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瑞能 - WEEN /
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10页 378K
描述
Silicon Carbide Diode

NXPLQSC20650W 数据手册

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NXPLQSC20650W  
Silicon Carbide Diode  
22 November 2016  
Product data sheet  
1. General description  
Dual Silicon Carbide Schottky diode in a 3-lead TO-247 plastic package, designed for high  
frequency switched-mode power supplies.  
2. Features and benefits  
Highly stable switching performance  
High forward surge capability IFSM  
Extremely fast reverse recovery time  
Superior in efficiency to Silicon Diode alternatives  
Reduced losses in associated MOSFET  
Reduced EMI  
Reduced cooling requirements  
RoHS compliant  
3. Applications  
Power factor correction  
Telecom / Server SMPS  
UPS  
PV inverter  
Electrical Vehicle Charger  
Motor Drives  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VRRM  
repetitive peak reverse  
voltage  
-
-
650  
V
IO(AV)  
limiting average output Tmb ≤ 74 °C; δfactor = 0.5 ; square-  
-
-
-
-
20  
A
current  
wave pulse; both diodes conducting;  
Fig. 1; Fig. 2; Fig. 3; Fig. 4  
Tj  
junction temperature  
175  
°C  
Static characteristics  
VF  
forward voltage  
IF = 10 A; Tj = 25 °C; Fig. 6  
IF = 10 A; Tj = 150 °C; Fig. 6  
-
-
1.65  
2.1  
1.85  
2.5  
V
V
Dynamic characteristics  
Qr  
recovered charge  
IF = 10 A; dIF/dt = 500 A/µs;  
VR = 400 V; Tj = 25 °C; Fig. 7  
-
11  
-
nC  
 
 
 
 

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