Datasheet > NX8563LB

NX8563LB

更新时间： 2024-09-19 06:00:39

品牌	Logo	应用领域
日电电子 - NEC		光纤二极管激光二极管光纤放大器
页数	文件大小	规格书
8页	63K
描述
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

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中文翻译

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NX8563LB 数据手册

DATA SHEET

LASER DIODE

NX7460LE

1 480 nm EDFA APPLICATION

InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION

The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical

Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple

Quantum Well (st-MQW) DC-PBH laser diode that features high output power, high efficiency, and stable

fundamental mode.

FEATURES

•

InGaAsP strained MQW DC-PBH laser diode

High output power

P^f= 120 mW MIN. @ I^F= 550 mA CW

Internal optical isolator, thermoelectric cooler and InGaAs monitor photo diode

Hermetically sealed 14-pin butterfly package

Single mode fiber pigtail

Wide operating temperature range

T^C= 0 to +65 °C

PACKAGE DIMENSIONS

15.24

2.54

in millimeters

TOP VIEW

4– 2.67

22.3

Case

#14

0.5

PIN CONNECTIONS

20.83±0.13

26.04±0.13

Pin No.

Function

Pin No.

Function

Cooler Anode

Thermistor

PD Anode

PD Cathode

Case Ground

Optical Fiber (SMF)

Length: 1 m MIN.

LD Anode,

Case Ground

LD Cathode

Case Ground

Cooler Cathod

29.97±0.25

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14127EJ2V0DS00 (2nd edition)

Date Published September 1999 NS CP(K)

Printed in Japan

The mark • shows major revised points.

1999

12 3 4 5 6 7 8

中文翻译

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