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NX5321EH-AZ PDF预览

NX5321EH-AZ

更新时间: 2024-11-02 01:17:59
品牌 Logo 应用领域
CEL 光电半导体
页数 文件大小 规格书
7页 190K
描述
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE

NX5321EH-AZ 数据手册

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LASER DIODE  
NX5321 Series  
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH  
InGaAsP MQW-FP LASER DIODE  
DESCRIPTION  
The NX5321 Series is a 1 310 nm Multiple Quantum Well (MQW)  
structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These  
devices are designed for application up to 1.25 Gb/s.  
APPLICATIONS  
STM-1 (I-1, S-1.1), STM-4 (I-4, S-4.1), ITU-T recommendations  
FTTH P2P (Fiber To The Home Point to Point) system  
FEATURES  
Optical output power  
Low threshold current  
Differential efficiency  
Po = 5.0 mW  
lth = 7 mA  
ηd = 0.3 W/A  
Wide operating temperature range TC = 40 to +85°C  
InGaAs monitor PIN-PD  
CAN package  
φ 5.6 mm  
Fiber coupling point  
5.8 mm  
Document No. PL10739EJ01V0DS (1st edition)  
Date Published December 2008 NS  
2008  

与NX5321EH-AZ相关器件

型号 品牌 获取价格 描述 数据表
NX5321EK NEC

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1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
NX5321EK-AZ CEL

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1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
NX5322 NEC

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1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
NX5322 CEL

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1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
NX5322EH NEC

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1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
NX5322EH RENESAS

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FIBER OPTIC LASER DIODE EMITTER, 1290-1330nm, THROUGH HOLE MOUNT, CAN, CAN PACKAGE-4
NX5322EH-AZ CEL

获取价格

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
NX5322EK NEC

获取价格

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
NX5322EK RENESAS

获取价格

FIBER OPTIC LASER DIODE EMITTER, 1290-1330nm, THROUGH HOLE MOUNT, CAN, CAN PACKAGE-4
NX5322EK-AZ CEL

获取价格

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE