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NX5322EH PDF预览

NX5322EH

更新时间: 2024-09-27 06:00:39
品牌 Logo 应用领域
日电电子 - NEC 二极管激光二极管
页数 文件大小 规格书
7页 88K
描述
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

NX5322EH 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.92主体高度:4.1 mm
主体长度或直径:5.6 mm数据速率:1250 Mbps
最长下降时间:0.15 ns光纤设备类型:DFB LASER DIODE EMITTER
JESD-609代码:e0安装特点:THROUGH HOLE MOUNT
信道数量:2最高工作温度:85 °C
最低工作温度:-40 °C最大工作波长:1330 nm
最小工作波长:1290 nm标称工作波长:1310 nm
上升时间:0.15 ns光谱宽度:1 nm
电源电流:150 mA最大供电电压:1.5 V
标称供电电压:1.1 V表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)最小阈值电流:7 mA
传输类型:DIGITALBase Number Matches:1

NX5322EH 数据手册

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DATA SHEET  
LASER DIODE  
NX5322 Series  
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s,  
InGaAsP MQW-FP LASER DIODE  
DESCRIPTION  
The NX5322 Series is a 1 310 nm Multiple Quantum Well (MQW)  
structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These  
devices are designed for application up to 1.25 Gb/s.  
APPLICATIONS  
STM-1 (L-1.1), STM-4 (S-4.1), ITU-T recommendations  
FTTH (Fiber To The Home) system  
FEATURES  
Optical output power  
Low threshold current  
Differential Efficiency  
Po = 5.0 mW  
lth = 7 mA  
ηd = 0.45 W/A  
Wide operating temperature range TC = 40 to +85°C  
InGaAs monitor PIN-PD  
CAN package  
Focal point  
φ 5.6 mm  
6.35 mm  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. PL10740EJ02V0DS (2nd edition)  
Date Published April 2009 NS  
Printed in Japan  
2008, 2009  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  

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