Datasheet > NX5330SA

NX5330SA

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NX5330SA 技术参数

DATA SHEET

LASER DIODE

NX5330SA

1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS

DESCRIPTION

The NX5330SA is a 1 310 nm Multiple Quantum Well (MQW) structured

Fabry-Perot (FP) laser diode. This device is specified to operate under

pulsed condition and designed for light source of Optical Time Domain

Reflectometer (OTDR).

FEATURES

•

High output power

Long wavelength

PO = 350 mW @ IFP = 1 000 mA^*1

λ^C= 1 310 nm

*1 Pulse Conditions: Pulse width (PW) = 10 μs, Duty = 1%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. PL10699EJ01V0DS (1st edition)

Date Published January 2008 NS

Printed in Japan

2008

12 3 4 5 6

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NX54SB	DIODES	获取价格	5.0mmx3.2mm HCSL 4-frequency Programmable XO
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NX5501EH-A	NEC	获取价格	Laser Diode Emitter, 1480nm Min, 1580nm Max, Through Hole Mount, CAN PACKAGE-3
NX5501EH-AZ	CEL	获取价格	NECs 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
NX5501EK	NEC	获取价格	Laser Diode Emitter, 1480nm Min, 1580nm Max, Through Hole Mount,
NX5501EK	RENESAS	获取价格	FIBER OPTIC LASER DIODE EMITTER, 1480-1580nm, THROUGH HOLE MOUNT