Datasheet > NVMJST1D2N04CTXG

NVMJST1D2N04CTXG

更新时间： 2023-09-03 20:29:32

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	322K
描述
Single N-Channel Power MOSFET 40V, 268A, 1.2 mΩ on Top Cool Package

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NVMJST1D2N04CTXG 数据手册

NVMJST1D2N04C

TYPICAL CHARACTERISTICS

500

450

400

350

300

250

200

150

= 10 V to 8.0 V

450

6.0 V

400

350

300

250

5.2 V

200

T = 25°C

150

4.8 V

100

T = 125°C

4.4 V

4.0 V

T = −55°C

3.5

4.5

5.5

, DRAIN−TO−SOURCE VOLTAGE (V)

, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

2.0

T = 25°C

1.75

= 50 A

1.5

1.25

1.0

= 10 V

0.75

0.5

0.25

100

140

180

220

260

300

, GATE−TO−SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

Figure 4. On−Resistance vs. Drain Current and

Voltage

Gate Voltage

2.0

100K

10K

= 10 V

= 50 A

T = 175°C

1.75

1.5

T = 125°C

T = 85°C

1.25

1.0

100

T = 25°C

0.75

0.5

−50 −25

100 125 150 175

T , JUNCTION TEMPERATURE (°C)

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Figure 6. Drain−to−Source Leakage Current

Temperature

vs. Voltage

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1 234 5 6 7

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